Electroabsorption spectra of hydrogenated amorphous and microcrystalline silicon

Lin Jiang, Eric Allan Schiff, F. Finger, P. Hapke, S. Koynov, R. Schwarz, N. Wyrsch, A. Shah, J. Yang, S. Guha

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We report on electroabsorption spectra for plasma deposited thin films of hydrogenated silicon ranging from amorphous (a-Si:H) to microcrystalline (μc-Si:H) structures. The EA spectrum of a-Si:H deposited from silane with low hydrogen dilution were consistent with previous works; material prepared with high hydrogen dilution showed a 0.07 eV blue shift of the spectrum and somewhat stronger electroabsorption. μc-Si:H specimens have a sharp peak at 1.19eV; the spectrum is blue shifted by 0.03 eV and is significantly stronger than electroabsorption reported in single crystal silicon. Spectral features which have no correspondence to single crystal silicon were also observed in μc-Si:H. Specimens deposited using 'cyclic' deposition and chemical annealing had electroabsorption spectra with both the 1.19 eV, crystalline feature and a band peaking at 2.02 eV which we attribute to strongly hydrogenated a-Si:H. We discuss applications of electroabsorption to determining the crystal fraction of microcrystalline material and to determining grain size distributions.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
Number of pages6
StatePublished - 1997
EventProceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA
Duration: Mar 31 1997Apr 4 1997


OtherProceedings of the 1997 MRS Spring Symposium
CitySan Francisco, CA, USA


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Jiang, L., Schiff, E. A., Finger, F., Hapke, P., Koynov, S., Schwarz, R., Wyrsch, N., Shah, A., Yang, J., & Guha, S. (1997). Electroabsorption spectra of hydrogenated amorphous and microcrystalline silicon. In Materials Research Society Symposium - Proceedings (Vol. 467, pp. 295-300). MRS.