Electroabsorption measurements and built-in potentials in amorphous silicon-germanium solar cells

J. H. Lyou, E. A. Schiff, S. Guha, J. Yang

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

We report electromodulated reflectance spectra in n-i-p solar cells with hydrogenated amorphous silicon-germanium alloy absorber layers. At lower photon energies the spectra are determined by bulk electroabsorption, and exhibit peaks near the optical gap of the absorber layers. Voltage scaling of the electroabsorption spectra indicate a built-in potential of Vbi=1.17 V in cells with absorber layer band gaps of 1.50 eV; in conjunction with earlier work, this value argues against a systematic decline in Vbi with an absorber layer band gap. At higher photon energies the spectra are due to direct electroreflectance; the voltage scaling was consistent with model predictions for the electric field at the interface of the p-type and absorber layers.

Original languageEnglish (US)
Pages (from-to)1924-1926
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number13
DOIs
StatePublished - Mar 26 2001

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Electroabsorption measurements and built-in potentials in amorphous silicon-germanium solar cells'. Together they form a unique fingerprint.

  • Cite this