Effects of Water Partial Pressure on the Activated Electron Beam Evaporation Process to Deposit Tin-Doped Indium-Oxide Films

Engineering & Materials Science

• Tin deposits 100%
• Indium 64%
• Oxide films 61%
• Partial pressure 58%
• Electron beams 58%
• Evaporation 49%
• Low energy electron diffraction 27%
• Water 26%
• Helium 13%
• Lattice mismatch 11%
• Auger electron spectroscopy 9%
• Diffraction patterns 8%
• Substrates 8%
• Surface structure 7%
• Diffraction 6%
• Annealing 6%
• Scattering 5%
• Temperature 4%

Physics & Astronomy

• water pressure 67%
• indium oxides 48%
• partial pressure 47%
• tin 46%
• deposits 44%
• oxide films 44%
• evaporation 37%
• electron beams 35%
• electron diffraction 8%
• helium 7%
• Auger spectroscopy 4%
• electron spectroscopy 4%
• envelopes 4%
• diffraction patterns 4%
• annealing 2%
• energy 2%
• symmetry 2%
• profiles 2%
• diffraction 2%
• scattering 2%
• temperature 1%

Chemical Compounds

• Electron Beam Evaporation 76%
• Low Energy Electron Diffraction 64%
• Partial Pressure 47%
• Quantum Size Effect 34%
• Auger Electron Spectroscopy 28%
• Surface Structure 24%
• Liquid Film 24%
• Annealing 19%
• Strength 15%
• Surface 7%