TY - JOUR
T1 - Effects of polymer crystallinity on non-fullerene acceptor based organic solar cell photostability
AU - Yi, Xueping
AU - Ho, Carr Hoi Yi
AU - Gautam, Bhoj
AU - Lei, Lei
AU - Chowdhury, Ashraful Haider
AU - Bahrami, Behzad
AU - Qiao, Qiquan
AU - So, Franky
N1 - Publisher Copyright:
© The Royal Society of Chemistry.
PY - 2020/12/7
Y1 - 2020/12/7
N2 - While there has been rapid progress made in the performance of organic photovoltaic (OPV) cells in recent years, the device stability remains a major bottleneck for commercialization. In this work, we blended a stable acceptor (O-IDTBR) with two photostable donors (PTB7-Th and PffBT4T-2OD) having different polymer crystallinity, and the resulting devices show a significant difference in the OPV degradation rate. The OPV devices employing a highly crystalline polymer PffBT4T-2OD as an active layer show a good resistance against light soaking, maintaining 80% of the initial power conversion efficiency (PCE) up to 100 hours, while the devices employing an amorphous polymer PTB7-Th as an active layer show a significant PCE loss in the initial 20 hours mainly due to a rapid loss of the fill factor. By carrying out a comprehensive analysis of the device degradation mechanisms, we conclude that the origin for the PTB7-Th:O-IDTBR device degradation is the formation of mid-gap states under continuous sunlight illumination, leading to a significant drop in electron mobility. Device simulation revealed that deep traps act as charge recombination centers and increase the trap-assisted recombination rate, lowering the FF and Jsc.
AB - While there has been rapid progress made in the performance of organic photovoltaic (OPV) cells in recent years, the device stability remains a major bottleneck for commercialization. In this work, we blended a stable acceptor (O-IDTBR) with two photostable donors (PTB7-Th and PffBT4T-2OD) having different polymer crystallinity, and the resulting devices show a significant difference in the OPV degradation rate. The OPV devices employing a highly crystalline polymer PffBT4T-2OD as an active layer show a good resistance against light soaking, maintaining 80% of the initial power conversion efficiency (PCE) up to 100 hours, while the devices employing an amorphous polymer PTB7-Th as an active layer show a significant PCE loss in the initial 20 hours mainly due to a rapid loss of the fill factor. By carrying out a comprehensive analysis of the device degradation mechanisms, we conclude that the origin for the PTB7-Th:O-IDTBR device degradation is the formation of mid-gap states under continuous sunlight illumination, leading to a significant drop in electron mobility. Device simulation revealed that deep traps act as charge recombination centers and increase the trap-assisted recombination rate, lowering the FF and Jsc.
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U2 - 10.1039/d0tc03969a
DO - 10.1039/d0tc03969a
M3 - Article
AN - SCOPUS:85097112193
SN - 2050-7534
VL - 8
SP - 16092
EP - 16099
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
IS - 45
ER -