TY - JOUR
T1 - Effects of electron- and hole-current hysteresis on trap characterization in organo-inorganic halide perovskite
AU - Wu, Fan
AU - Mabrouk, Sally
AU - Han, Miaomiao
AU - Tong, Yanhua
AU - Zhang, Tiansheng
AU - Zhang, Yuchen
AU - Bobba, Raja Sekhar
AU - Qiao, Quinn
N1 - Publisher Copyright:
© 2022 Science Press and Dalian Institute of Chemical Physics, Chinese Academy of Sciences
PY - 2023/1
Y1 - 2023/1
N2 - Charge trap density and carrier mobility of perovskite materials are the critical properties of perovskite solar cells. The space charge limited current (SCLC) method, which measures a dark current–voltage (I-V) curve of a single-carrier device has found extensive use for studying the trap density and charge carrier mobility in perovskite materials. Herein, it was found that the electron- and hole-current in organo-lead perovskite-based single-carrier device undergoes significant hysteresis under forward and reverse scanning due to the mobile ions. In addition, it was also observed that measuring history has a detrimental effect on hysteresis resulting in possible overestimation or underestimation of the extracted electrical values from the SCLC measurement. In the forward/reverse scanning process, the mobile ionic defects enhance/shield the charge in the traps due to ionic charging/discharging, thereby increasing/reducing the interface barrier and net charge in the I-V scanning, which in turn affects the determination of transport properties of the carrier. These results raise quite a few doubts over the direct application of classical SCLC measurements for the accurate characterization of intrinsic transport properties of the mixed ionic-electronic perovskite.
AB - Charge trap density and carrier mobility of perovskite materials are the critical properties of perovskite solar cells. The space charge limited current (SCLC) method, which measures a dark current–voltage (I-V) curve of a single-carrier device has found extensive use for studying the trap density and charge carrier mobility in perovskite materials. Herein, it was found that the electron- and hole-current in organo-lead perovskite-based single-carrier device undergoes significant hysteresis under forward and reverse scanning due to the mobile ions. In addition, it was also observed that measuring history has a detrimental effect on hysteresis resulting in possible overestimation or underestimation of the extracted electrical values from the SCLC measurement. In the forward/reverse scanning process, the mobile ionic defects enhance/shield the charge in the traps due to ionic charging/discharging, thereby increasing/reducing the interface barrier and net charge in the I-V scanning, which in turn affects the determination of transport properties of the carrier. These results raise quite a few doubts over the direct application of classical SCLC measurements for the accurate characterization of intrinsic transport properties of the mixed ionic-electronic perovskite.
KW - Ionic defects
KW - Mobility
KW - Organo-lead perovskite
KW - Space-charge-limited-current
KW - Trap density
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U2 - 10.1016/j.jechem.2022.10.011
DO - 10.1016/j.jechem.2022.10.011
M3 - Article
AN - SCOPUS:85140770942
SN - 2095-4956
VL - 76
SP - 414
EP - 420
JO - Journal of Energy Chemistry
JF - Journal of Energy Chemistry
ER -