Dynamic thermal management for FinFET-based circuits exploiting the temperature effect inversion phenomenon

Due to limits on the availability of the energy source in many mobile user platforms (ranging from handheld devices to portable electronics to deeply embedded devices) and concerns about how much heat can effectively be removed from chips, minimizing the power consumption has become a primary driver for system-on-chip designers. Because of their superb characteristics, FinFETs have emerged as a promising replacement for planar CMOS devices in sub-20nm CMOS technology nodes. However, based on extensive simulations, we have observed that the delay vs. temperature characteristics of FinFET-based circuits are fundamentally different from that of the conventional bulk CMOS circuits, i.e., the delay of a FinFET circuit decreases with increasing temperature even in the super-threshold supply voltage regime. Unfortunately, the leakage power dissipation of the FinFET-based circuits increases exponentially with the temperature. These two trends give rise to a tradeoff between delay and leakage power as a function of the chip temperature, and hence, lead to the definition of an optimum chip temperature operating point (i.e., one that balances concerns about the circuit speed and power efficiency.) This paper presents the results of our investigations into the aforesaid temperature effect inversion (TEI) and proposes a novel dynamic thermal management (DTM) algorithm, which exploits this phenomenon to minimize the energy consumption of FinFET-based circuits without any appreciable performance penalty. Experimental results demonstrate 40% energy saving (with no performance penalty) can be achieved by the proposed TEI-aware DTM approach compared to the best-in-class DTMs that are unaware of this phenomenon.