Drift mobility measurements in porous silicon

L. Tsybeskov, C. Peng, P. M. Fauchet, Q. Gu, E. A. Schiff

Research output: Contribution to journalConference article

3 Scopus citations

Abstract

Modulated electroluminescence (EL) measurements performed on a series of porous silicon (PSi) diodes are presented. The maximum response time of the devices scales with the square of the PSi layer thickness and inversely with the applied forward bias voltage. These scaling results indicate that the maximum response time is a carrier transit time from which a drift mobility μ of 10-4 cm2/Vs is deduced at room temperature. Time-of-flight transport measurements on PSi are in qualitative agreement with this value for μ; in addition, they identify μ as the electron mobility and show that transport is dispersive, in contrast to the interpretation of the modulated EL experiments.

Original languageEnglish (US)
Pages (from-to)825-829
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume420
DOIs
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 11 1996

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Drift mobility measurements in porous silicon'. Together they form a unique fingerprint.

  • Cite this