Abstract
Published electron and hole drift-mobility measurements in hydrogenated amorphous silicon (a-Si:H), amorphous silicon alloys (a-SiGe:H and a-SiC:H), and microcrystalline silicon (μc-Si:H) are analysed in terms of the exponential bandtail trapping model. A three-parameter model was employed using an exponential bandtail width ΔE, the band mobility μ0, and the attempt-toescape frequency v. Low-temperature measurements indicate a value around μ0 = 1 cm2 V-1 s-1 for both the conduction and valence bands over the entire range of materials. High temperature-measurements for electrons in a-Si:H suggest a larger value of 7 cm2 V-1 s-1. These properties and those of the frequency v are discussed as possible attributes of a mobility edge.
| Original language | English (US) |
|---|---|
| Journal | Journal of Physics Condensed Matter |
| Volume | 16 |
| Issue number | 44 |
| DOIs | |
| State | Published - Nov 10 2004 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Drift-mobility measurements and mobility edges in disordered silicons. / Schiff, Eric Allan.
In: Journal of Physics Condensed Matter, Vol. 16, No. 44, 10.11.2004.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Drift-mobility measurements and mobility edges in disordered silicons
AU - Schiff, Eric Allan
PY - 2004/11/10
Y1 - 2004/11/10
N2 - Published electron and hole drift-mobility measurements in hydrogenated amorphous silicon (a-Si:H), amorphous silicon alloys (a-SiGe:H and a-SiC:H), and microcrystalline silicon (μc-Si:H) are analysed in terms of the exponential bandtail trapping model. A three-parameter model was employed using an exponential bandtail width ΔE, the band mobility μ0, and the attempt-toescape frequency v. Low-temperature measurements indicate a value around μ0 = 1 cm2 V-1 s-1 for both the conduction and valence bands over the entire range of materials. High temperature-measurements for electrons in a-Si:H suggest a larger value of 7 cm2 V-1 s-1. These properties and those of the frequency v are discussed as possible attributes of a mobility edge.
AB - Published electron and hole drift-mobility measurements in hydrogenated amorphous silicon (a-Si:H), amorphous silicon alloys (a-SiGe:H and a-SiC:H), and microcrystalline silicon (μc-Si:H) are analysed in terms of the exponential bandtail trapping model. A three-parameter model was employed using an exponential bandtail width ΔE, the band mobility μ0, and the attempt-toescape frequency v. Low-temperature measurements indicate a value around μ0 = 1 cm2 V-1 s-1 for both the conduction and valence bands over the entire range of materials. High temperature-measurements for electrons in a-Si:H suggest a larger value of 7 cm2 V-1 s-1. These properties and those of the frequency v are discussed as possible attributes of a mobility edge.
UR - http://www.scopus.com/inward/record.url?scp=9244242067&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=9244242067&partnerID=8YFLogxK
U2 - 10.1088/0953-8984/16/44/023
DO - 10.1088/0953-8984/16/44/023
M3 - Article
AN - SCOPUS:9244242067
VL - 16
JO - Journal of Physics Condensed Matter
JF - Journal of Physics Condensed Matter
SN - 0953-8984
IS - 44
ER -