Drift-mobility measurements and mobility edges in disordered silicons

Research output: Contribution to journalArticle

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Abstract

Published electron and hole drift-mobility measurements in hydrogenated amorphous silicon (a-Si:H), amorphous silicon alloys (a-SiGe:H and a-SiC:H), and microcrystalline silicon (μc-Si:H) are analysed in terms of the exponential bandtail trapping model. A three-parameter model was employed using an exponential bandtail width ΔE, the band mobility μ0, and the attempt-toescape frequency v. Low-temperature measurements indicate a value around μ0 = 1 cm2 V-1 s-1 for both the conduction and valence bands over the entire range of materials. High temperature-measurements for electrons in a-Si:H suggest a larger value of 7 cm2 V-1 s-1. These properties and those of the frequency v are discussed as possible attributes of a mobility edge.

Original languageEnglish (US)
JournalJournal of Physics Condensed Matter
Volume16
Issue number44
DOIs
StatePublished - Nov 10 2004

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Silicon
Amorphous silicon
Temperature measurement
Microcrystalline silicon
Silicon alloys
amorphous silicon
temperature measurement
Electrons
Amorphous alloys
silicon
Valence bands
Conduction bands
silicon alloys
conduction bands
electrons
trapping
valence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Drift-mobility measurements and mobility edges in disordered silicons. / Schiff, Eric Allan.

In: Journal of Physics Condensed Matter, Vol. 16, No. 44, 10.11.2004.

Research output: Contribution to journalArticle

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