Abstract
Published electron and hole drift-mobility measurements in hydrogenated amorphous silicon (a-Si:H), amorphous silicon alloys (a-SiGe:H and a-SiC:H), and microcrystalline silicon (μc-Si:H) are analysed in terms of the exponential bandtail trapping model. A three-parameter model was employed using an exponential bandtail width ΔE, the band mobility μ0, and the attempt-toescape frequency v. Low-temperature measurements indicate a value around μ0 = 1 cm2 V-1 s-1 for both the conduction and valence bands over the entire range of materials. High temperature-measurements for electrons in a-Si:H suggest a larger value of 7 cm2 V-1 s-1. These properties and those of the frequency v are discussed as possible attributes of a mobility edge.
Original language | English (US) |
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Pages (from-to) | S5265-S5275 |
Journal | Journal of Physics Condensed Matter |
Volume | 16 |
Issue number | 44 |
DOIs | |
State | Published - Nov 10 2004 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics