TY - JOUR
T1 - Drift-mobility measurements and mobility edges in disordered silicons
AU - Schiff, E. A.
PY - 2004/11/10
Y1 - 2004/11/10
N2 - Published electron and hole drift-mobility measurements in hydrogenated amorphous silicon (a-Si:H), amorphous silicon alloys (a-SiGe:H and a-SiC:H), and microcrystalline silicon (μc-Si:H) are analysed in terms of the exponential bandtail trapping model. A three-parameter model was employed using an exponential bandtail width ΔE, the band mobility μ0, and the attempt-toescape frequency v. Low-temperature measurements indicate a value around μ0 = 1 cm2 V-1 s-1 for both the conduction and valence bands over the entire range of materials. High temperature-measurements for electrons in a-Si:H suggest a larger value of 7 cm2 V-1 s-1. These properties and those of the frequency v are discussed as possible attributes of a mobility edge.
AB - Published electron and hole drift-mobility measurements in hydrogenated amorphous silicon (a-Si:H), amorphous silicon alloys (a-SiGe:H and a-SiC:H), and microcrystalline silicon (μc-Si:H) are analysed in terms of the exponential bandtail trapping model. A three-parameter model was employed using an exponential bandtail width ΔE, the band mobility μ0, and the attempt-toescape frequency v. Low-temperature measurements indicate a value around μ0 = 1 cm2 V-1 s-1 for both the conduction and valence bands over the entire range of materials. High temperature-measurements for electrons in a-Si:H suggest a larger value of 7 cm2 V-1 s-1. These properties and those of the frequency v are discussed as possible attributes of a mobility edge.
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U2 - 10.1088/0953-8984/16/44/023
DO - 10.1088/0953-8984/16/44/023
M3 - Article
AN - SCOPUS:9244242067
SN - 0953-8984
VL - 16
SP - S5265-S5275
JO - Journal of Physics Condensed Matter
JF - Journal of Physics Condensed Matter
IS - 44
ER -