Drift-mobility measurements and mobility edges in disordered silicons

Research output: Contribution to journalArticlepeer-review

37 Scopus citations


Published electron and hole drift-mobility measurements in hydrogenated amorphous silicon (a-Si:H), amorphous silicon alloys (a-SiGe:H and a-SiC:H), and microcrystalline silicon (μc-Si:H) are analysed in terms of the exponential bandtail trapping model. A three-parameter model was employed using an exponential bandtail width ΔE, the band mobility μ0, and the attempt-toescape frequency v. Low-temperature measurements indicate a value around μ0 = 1 cm2 V-1 s-1 for both the conduction and valence bands over the entire range of materials. High temperature-measurements for electrons in a-Si:H suggest a larger value of 7 cm2 V-1 s-1. These properties and those of the frequency v are discussed as possible attributes of a mobility edge.

Original languageEnglish (US)
Pages (from-to)S5265-S5275
JournalJournal of Physics Condensed Matter
Issue number44
StatePublished - Nov 10 2004

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics


Dive into the research topics of 'Drift-mobility measurements and mobility edges in disordered silicons'. Together they form a unique fingerprint.

Cite this