Drift-mobility characterization of silicon thin-film solar cells using photocapacitance

J. K. Lee, A. M. Hamza, S. Dinca, Q. Long, E. A. Schiff, Q. Wang, B. Yan, J. Yang, S. Guha

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

We have applied the photocapacitance method to the measurements of hole drift-mobilities in silicon solar cells. We found a simple analysis that yields drift-mobilities even in the presence of anomalously dispersive transport. On one thick sample we measured the hole drift-mobility using both the photocapacitance and the time-of-flight methods; the two methods gave results that were consistent with each other and with the established bandtail multiple-trapping model. We then applied the method to thinner samples that are more characteristic of the conditions in solar modules, but are not generally usable for the time-of-flight method. These samples showed much smaller hole drift-mobilities than expected from the bandtail trapping model. We speculate that the hole drift-mobility has smaller values in regions close to the substrate during deposition than has been reported for thicker samples.

Original languageEnglish (US)
Pages (from-to)2194-2197
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume358
Issue number17
DOIs
StatePublished - Sep 1 2012

Keywords

  • Drift-mobility
  • Photocapacitance
  • Silicon solar cells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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