Direct observation of dangling bond motion in disordered silicon

N. Nickel, E. Schiff

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


We report an unexpected temperature dependence of the electron-spin-resonance linewidth (Formula presented) for the silicon (Formula presented)-center resonance in polycrystalline silicon. Distinct temperature dependences were found in as-prepared and hydrogen-passivated polycrystalline silicon. This observation invalidates the identification of this resonance with a static dangling bond, and changes the perspective on similar (Formula presented)-center resonances observed in amorphous silicon, porous silicon, and at crystal silicon interfaces. We propose that motional averaging is the principal mechanism for this effect, and illustrate this view with a calculation based on hopping of the (Formula presented) center.

Original languageEnglish (US)
Pages (from-to)1114-1117
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number3
StatePublished - 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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