Abstract
We report an unexpected temperature dependence of the electron-spin-resonance linewidth (Formula presented) for the silicon (Formula presented)-center resonance in polycrystalline silicon. Distinct temperature dependences were found in as-prepared and hydrogen-passivated polycrystalline silicon. This observation invalidates the identification of this resonance with a static dangling bond, and changes the perspective on similar (Formula presented)-center resonances observed in amorphous silicon, porous silicon, and at crystal silicon interfaces. We propose that motional averaging is the principal mechanism for this effect, and illustrate this view with a calculation based on hopping of the (Formula presented) center.
Original language | English (US) |
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Pages (from-to) | 1114-1117 |
Number of pages | 4 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 58 |
Issue number | 3 |
DOIs | |
State | Published - 1998 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics