Direct observation of dangling bond motion in disordered silicon

N. H. Nickel, Eric Allan Schiff

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We report an unexpected temperature dependence of the electron-spin-resonance linewidth ΔHPp for the silicon D-center resonance in polycrystalline silicon. Distinct temperature dependences were found in asprepared and hydrogen-passivated polycrystalline silicon. This observation invalidates the identification of this resonance with a static dangling bond, and changes the perspective on similar D-center resonances observed in amorphous silicon, porous silicon, and at crystal silicon interfaces. We propose that motional averaging is the principal mechanism for this effect, and illustrate this view with a calculation based on hopping of the D center.

Original languageEnglish (US)
Pages (from-to)1114-1117
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume58
Issue number3
StatePublished - Jul 15 1998

Fingerprint

Dangling bonds
Silicon
Polysilicon
silicon
Porous silicon
Amorphous silicon
Linewidth
temperature dependence
Paramagnetic resonance
Hydrogen
porous silicon
amorphous silicon
Temperature
electron paramagnetic resonance
Crystals
hydrogen
crystals

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Direct observation of dangling bond motion in disordered silicon. / Nickel, N. H.; Schiff, Eric Allan.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 58, No. 3, 15.07.1998, p. 1114-1117.

Research output: Contribution to journalArticle

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