Diffusion-controlled bimolecular recombination of electrons and holes in a-Si: H

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

The fluctuation-dominated and mean-field models for diffusion-controlled bimolecular recombination are compared with picosecond domain transient optical experiments on a-Si:H. Using no fitting parameters, the fluctuation-dominated model gives a good account for the optical decay times as a function of laser intensity. A lower bound for the thermalization radius of a photogenerated electron-hole pair, r0 > 12 nm, is inferred. a-Si:H ia felicitous material for exhibiting the fluctuation-dominated effects since it combines a modest electron mobility with an unexplained but large thermalization radius. However, the role of the electrostatic potential fluctuations due to the charged electrons and holes is not understood.

Original languageEnglish (US)
Pages (from-to)1-8
Number of pages8
JournalJournal of Non-Crystalline Solids
Volume190
Issue number1-2
StatePublished - Oct 1 1995

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Electrons
Electron mobility
Electrostatics
electrons
radii
Lasers
electron mobility
Experiments
electrostatics
decay
lasers

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites

Cite this

Diffusion-controlled bimolecular recombination of electrons and holes in a-Si : H. / Schiff, Eric Allan.

In: Journal of Non-Crystalline Solids, Vol. 190, No. 1-2, 01.10.1995, p. 1-8.

Research output: Contribution to journalArticle

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