Differential photocurrent transient measurements in a-Si:H

R. Pandya; E. A. Schiff

doi:10.1016/0022-3093(83)90580-X

Differential photocurrent transient measurements in a-Si:H

R. Pandya, E. A. Schiff

Department of Physics

Research output: Contribution to journal › Article › peer-review

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Abstract

Differential photocurrent transients undoped a-Si:H have been measured using a Fourier transform technique. These transients are superposed on static photocurrents from bias illumination and are a linear response of the specimen. The form of the measured transient is dispersive and depends on the bias illumination intensity even at short times; the observations disagree with the predictions of the multiple-trapping model for dispersive transport.

Original language	English (US)
Pages (from-to)	297-300
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	59-60
Issue number	PART 1
DOIs	https://doi.org/10.1016/0022-3093(83)90580-X
State	Published - Dec 1983

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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abstract = "Differential photocurrent transients undoped a-Si:H have been measured using a Fourier transform technique. These transients are superposed on static photocurrents from bias illumination and are a linear response of the specimen. The form of the measured transient is dispersive and depends on the bias illumination intensity even at short times; the observations disagree with the predictions of the multiple-trapping model for dispersive transport.",

author = "R. Pandya and Schiff, {E. A.}",

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AB - Differential photocurrent transients undoped a-Si:H have been measured using a Fourier transform technique. These transients are superposed on static photocurrents from bias illumination and are a linear response of the specimen. The form of the measured transient is dispersive and depends on the bias illumination intensity even at short times; the observations disagree with the predictions of the multiple-trapping model for dispersive transport.

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Differential photocurrent transient measurements in a-Si:H

Abstract

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