Differential photocurrent transients undoped a-Si:H have been measured using a Fourier transform technique. These transients are superposed on static photocurrents from bias illumination and are a linear response of the specimen. The form of the measured transient is dispersive and depends on the bias illumination intensity even at short times; the observations disagree with the predictions of the multiple-trapping model for dispersive transport.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry