Differential photocurrent transient measurements in a-Si:H

R. Pandya, E. A. Schiff

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

Differential photocurrent transients undoped a-Si:H have been measured using a Fourier transform technique. These transients are superposed on static photocurrents from bias illumination and are a linear response of the specimen. The form of the measured transient is dispersive and depends on the bias illumination intensity even at short times; the observations disagree with the predictions of the multiple-trapping model for dispersive transport.

Original languageEnglish (US)
Pages (from-to)297-300
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume59-60
Issue numberPART 1
DOIs
StatePublished - Dec 1983

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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