Differential photocurrent transient measurements in a-Si

H

Research output: Contribution to journalArticle

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Abstract

Differential photocurrent transients undoped a-Si:H have been measured using a Fourier transform technique. These transients are superposed on static photocurrents from bias illumination and are a linear response of the specimen. The form of the measured transient is dispersive and depends on the bias illumination intensity even at short times; the observations disagree with the predictions of the multiple-trapping model for dispersive transport.

Original languageEnglish (US)
Pages (from-to)297-300
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume59-60
Issue numberPART 1
DOIs
StatePublished - 1983

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Photocurrents
photocurrents
illumination
Lighting
trapping
Fourier transforms
predictions

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Engineering(all)

Cite this

Differential photocurrent transient measurements in a-Si : H. / Pandya, R.; Schiff, Eric Allan.

In: Journal of Non-Crystalline Solids, Vol. 59-60, No. PART 1, 1983, p. 297-300.

Research output: Contribution to journalArticle

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