Development of polaron-transformed explicitly correlated full configuration interaction method for investigation of quantum-confined Stark effect in GaAs quantum dots

Christopher J. Blanton, Christopher Brenon, Arindam Chakraborty

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6 Citations (Scopus)

Abstract

The effect of external electric field on electron-hole (eh) correlation in gallium arsenide quantum dots is investigated. The electron-hole Schrodinger equation in the presence of an external electric field is solved using explicitly correlated full configuration interaction method and accurate exciton binding energy and electron-hole recombination probability are obtained. The effect of the electric field was included in the 1-particle single component basis functions by performing variational polaron transformation. The quality of the wavefunction at small inter-particle distances was improved by using Gaussian-type geminal function that depended explicitly on the electron-hole separation distance. The parameters of the explicitly correlated function were determined variationally at each field strength. The scaling of total exciton energy, exciton binding energy, and electron-hole recombination probability with respect to the strength of the electric field was investigated. It was found that a 500 kV/cm change in field strength reduces the binding energy and recombination probability by a factor of 2.6 and 166, respectively. The results show that the eh-recombination probability is affected much more strongly by the electric field than the exciton binding energy. Analysis using the polaron-transformed basis indicates that the exciton binding should asymptotically vanish in the limit of large field strength.

Original languageEnglish (US)
Article number054114
JournalThe Journal of Chemical Physics
Volume138
Issue number5
DOIs
StatePublished - Feb 7 2013

Fingerprint

Stark effect
Gene Conversion
Quantum Dots
configuration interaction
Semiconductor quantum dots
quantum dots
Electrons
Binding energy
Electric fields
Genetic Recombination
excitons
binding energy
electric fields
field strength
Schrodinger equation
Wave functions
gallium
gallium arsenide
LDS 751
scaling

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry
  • Medicine(all)

Cite this

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abstract = "The effect of external electric field on electron-hole (eh) correlation in gallium arsenide quantum dots is investigated. The electron-hole Schrodinger equation in the presence of an external electric field is solved using explicitly correlated full configuration interaction method and accurate exciton binding energy and electron-hole recombination probability are obtained. The effect of the electric field was included in the 1-particle single component basis functions by performing variational polaron transformation. The quality of the wavefunction at small inter-particle distances was improved by using Gaussian-type geminal function that depended explicitly on the electron-hole separation distance. The parameters of the explicitly correlated function were determined variationally at each field strength. The scaling of total exciton energy, exciton binding energy, and electron-hole recombination probability with respect to the strength of the electric field was investigated. It was found that a 500 kV/cm change in field strength reduces the binding energy and recombination probability by a factor of 2.6 and 166, respectively. The results show that the eh-recombination probability is affected much more strongly by the electric field than the exciton binding energy. Analysis using the polaron-transformed basis indicates that the exciton binding should asymptotically vanish in the limit of large field strength.",
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N2 - The effect of external electric field on electron-hole (eh) correlation in gallium arsenide quantum dots is investigated. The electron-hole Schrodinger equation in the presence of an external electric field is solved using explicitly correlated full configuration interaction method and accurate exciton binding energy and electron-hole recombination probability are obtained. The effect of the electric field was included in the 1-particle single component basis functions by performing variational polaron transformation. The quality of the wavefunction at small inter-particle distances was improved by using Gaussian-type geminal function that depended explicitly on the electron-hole separation distance. The parameters of the explicitly correlated function were determined variationally at each field strength. The scaling of total exciton energy, exciton binding energy, and electron-hole recombination probability with respect to the strength of the electric field was investigated. It was found that a 500 kV/cm change in field strength reduces the binding energy and recombination probability by a factor of 2.6 and 166, respectively. The results show that the eh-recombination probability is affected much more strongly by the electric field than the exciton binding energy. Analysis using the polaron-transformed basis indicates that the exciton binding should asymptotically vanish in the limit of large field strength.

AB - The effect of external electric field on electron-hole (eh) correlation in gallium arsenide quantum dots is investigated. The electron-hole Schrodinger equation in the presence of an external electric field is solved using explicitly correlated full configuration interaction method and accurate exciton binding energy and electron-hole recombination probability are obtained. The effect of the electric field was included in the 1-particle single component basis functions by performing variational polaron transformation. The quality of the wavefunction at small inter-particle distances was improved by using Gaussian-type geminal function that depended explicitly on the electron-hole separation distance. The parameters of the explicitly correlated function were determined variationally at each field strength. The scaling of total exciton energy, exciton binding energy, and electron-hole recombination probability with respect to the strength of the electric field was investigated. It was found that a 500 kV/cm change in field strength reduces the binding energy and recombination probability by a factor of 2.6 and 166, respectively. The results show that the eh-recombination probability is affected much more strongly by the electric field than the exciton binding energy. Analysis using the polaron-transformed basis indicates that the exciton binding should asymptotically vanish in the limit of large field strength.

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