Abstract
The deposition of metal silicide thin films can be undertaken using volatile organometallic complexes. Organometallic vapor phase epitaxy or metal-organic chemical vapor phase epitaxy has a number of potential advantages over conventional chemical vapor deposition and molecular beam epitaxy technologies, and a number of novel thin film materials may be made from organometallic compounds. Plasma-, pyrolytic- and photolytic- assisted decomposition of organometallic complexes have been undertaken in an effort to make a variety of metallic and metal silicide thin films. These efforts are comprehensively reviewed.
Original language | English (US) |
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Pages (from-to) | 297-323 |
Number of pages | 27 |
Journal | Materials Science and Engineering B |
Volume | 2 |
Issue number | 4 |
DOIs | |
State | Published - Apr 1989 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering