Abstract
The deposition of metal silicide thin films can be undertaken using volatile organometallic complexes. Organometallic vapor phase epitaxy or metal-organic chemical vapor phase epitaxy has a number of potential advantages over conventional chemical vapor deposition and molecular beam epitaxy technologies, and a number of novel thin film materials may be made from organometallic compounds. Plasma-, pyrolytic- and photolytic- assisted decomposition of organometallic complexes have been undertaken in an effort to make a variety of metallic and metal silicide thin films. These efforts are comprehensively reviewed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 297-323 |
| Number of pages | 27 |
| Journal | Materials Science and Engineering B |
| Volume | 2 |
| Issue number | 4 |
| DOIs | |
| State | Published - Apr 1989 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Dowben, P. A., Spencer, J. T., & Stauf, G. T. (1989). Deposition of thin metal and metal silicide films from the decomposition of organometallic compounds. Materials Science and Engineering B, 2(4), 297-323. https://doi.org/10.1016/0921-5107(89)90007-X