TY - JOUR
T1 - Deposition of thin metal and metal silicide films from the decomposition of organometallic compounds
AU - Dowben, P. A.
AU - Spencer, J. T.
AU - Stauf, G. T.
PY - 1989/4
Y1 - 1989/4
N2 - The deposition of metal silicide thin films can be undertaken using volatile organometallic complexes. Organometallic vapor phase epitaxy or metal-organic chemical vapor phase epitaxy has a number of potential advantages over conventional chemical vapor deposition and molecular beam epitaxy technologies, and a number of novel thin film materials may be made from organometallic compounds. Plasma-, pyrolytic- and photolytic- assisted decomposition of organometallic complexes have been undertaken in an effort to make a variety of metallic and metal silicide thin films. These efforts are comprehensively reviewed.
AB - The deposition of metal silicide thin films can be undertaken using volatile organometallic complexes. Organometallic vapor phase epitaxy or metal-organic chemical vapor phase epitaxy has a number of potential advantages over conventional chemical vapor deposition and molecular beam epitaxy technologies, and a number of novel thin film materials may be made from organometallic compounds. Plasma-, pyrolytic- and photolytic- assisted decomposition of organometallic complexes have been undertaken in an effort to make a variety of metallic and metal silicide thin films. These efforts are comprehensively reviewed.
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U2 - 10.1016/0921-5107(89)90007-X
DO - 10.1016/0921-5107(89)90007-X
M3 - Article
AN - SCOPUS:0024639737
VL - 2
SP - 297
EP - 323
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
IS - 4
ER -