Dangling-bond relaxation and deep-level measurements in hydrogenated amorphous silicon

Howard M. Branz, Eric Allan Schiff

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

We present a new perspective on defect levels in hydrogenated amorphous silicon (a-Si:H) that unifies relaxation effects inferred from two recent experiments. In particular, we show how earlier calculations of dangling-bond relaxation can account for both the level deepening effect reported in transient capacitance measurements and the shallowing effect reported in transient photocurrent measurements under optical bias. The former is due to dangling-bond relaxation toward a pyramidal bonding configuration, and the latter to relaxation toward a planar configuration. We comment on the many-body nature of the remarkably slow kinetics of defect relaxation.

Original languageEnglish (US)
Pages (from-to)8667-8671
Number of pages5
JournalPhysical Review B
Volume48
Issue number12
DOIs
StatePublished - 1993

Fingerprint

Level measurement
Dangling bonds
Amorphous silicon
amorphous silicon
Defects
Capacitance measurement
Photocurrents
Kinetics
defects
configurations
Experiments
photocurrents
capacitance
kinetics

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Dangling-bond relaxation and deep-level measurements in hydrogenated amorphous silicon. / Branz, Howard M.; Schiff, Eric Allan.

In: Physical Review B, Vol. 48, No. 12, 1993, p. 8667-8671.

Research output: Contribution to journalArticle

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