DANGLING BOND IN UNDOPED AMORPHOUS HYDROGENATED SILICON: TRAP OR RECOMBINATION CENTER?

M. A. Parker, K. A. Conrad, Eric Allan Schiff

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The role of the neutral dangling bond defect upon photocarrier processes in undoped amorphous hydrogenated silicon (a-Si:H) is discussed. The evidence that the dangling bond is a simple recombination center is reviewed, and it is shown that this model does not account for photocurrent response time measurements. Experimental data pertinent to the role of electrical contacts upon response time measurements are presented, and it is concluded that contact effects do not account for response-time measurements. The possibility that the dangling bond is primarily an electron trap is discussed.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherMaterials Research Soc
Pages125-130
Number of pages6
Volume70
ISBN (Print)0931837367
StatePublished - 1986

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Parker, M. A., Conrad, K. A., & Schiff, E. A. (1986). DANGLING BOND IN UNDOPED AMORPHOUS HYDROGENATED SILICON: TRAP OR RECOMBINATION CENTER? In Materials Research Society Symposia Proceedings (Vol. 70, pp. 125-130). Materials Research Soc.