Dangling bond in amorphous hydrogenated silicon: Anomalous spin relaxation

U. Vahalia, J. Ferrario, E. A. Schiff

Research output: Contribution to journalArticle

Abstract

Spin relaxation of the dangling-bond defect in undoped plasma-deposited amorphous silicon has been studied using several electron-spin-resonance methods based on finite magnetic-field-modulation frequency effects. Spin-lattice relaxation (T1) processes alone do not account for the observations. Possible origins of the anomalous spin relaxation in spectral diffusion processes are discussed. Anomalous relaxation gives an additional signature of the dangling-bond defect which varies with deposition conditions. Solutions to Blochs equations for inhomogeneous spin systems at finite magnetic-field- modulation frequency are given, and a general relationship between modulation-frequency effects in conventional ESR and electron-electron double-resonance measurements is established.

Original languageEnglish (US)
Pages (from-to)1415-1421
Number of pages7
JournalPhysical Review B
Volume34
Issue number3
DOIs
StatePublished - Jan 1 1986

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ASJC Scopus subject areas

  • Condensed Matter Physics

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