Comparison of silicon-on-insulator and Body-on-Insulator FinFET based digital circuits with consideration on self-heating effects

Peijie Feng, Prasanta Ghosh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

In recent years FinFET emerges as a promising device to assure the desired performance in the sub-22 nm regime. Among various FinFETs, SOI FinFET shows suppressed leakage current and superior short channel effects. However, it suffers from increased self-heating effect (SHE) due to the adaptation of a low thermal conductivity buried silicon dioxide layer and a ultra thin fin body. Bulk FinFET, on the other hand, mitigates the heating issue at the cost of the leakage current. Body-on-Insulator (BOI) FinFET alleviates, to some extent, the aforementioned downsides of both SOI and bulk FinFET but with the increased fabrication complexity [1]. Here, we report extensive simulation of BOI and SOI FinFETs using technology computer aided design (TCAD) [2] and for the first time, present evaluation of BOI and SOI FinFET based digital circuits and demonstrate that in actuality SHE is comparable for both circuits under low voltage bias.

Original languageEnglish (US)
Title of host publication2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs
StatePublished - 2011
Event2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States
Duration: Dec 7 2011Dec 9 2011

Publication series

Name2011 International Semiconductor Device Research Symposium, ISDRS 2011

Other

Other2011 International Semiconductor Device Research Symposium, ISDRS 2011
CountryUnited States
CityCollege Park, MD
Period12/7/1112/9/11

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Feng, P., & Ghosh, P. (2011). Comparison of silicon-on-insulator and Body-on-Insulator FinFET based digital circuits with consideration on self-heating effects. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011 [6135230] (2011 International Semiconductor Device Research Symposium, ISDRS 2011). https://doi.org/10.1109/ISDRS.2011.6135230