In recent years FinFET emerges as a promising device to assure the desired performance in the sub-22 nm regime. Among various FinFETs, SOI FinFET shows suppressed leakage current and superior short channel effects. However, it suffers from increased self-heating effect (SHE) due to the adaptation of a low thermal conductivity buried silicon dioxide layer and a ultra thin fin body. Bulk FinFET, on the other hand, mitigates the heating issue at the cost of the leakage current. Body-on-Insulator (BOI) FinFET alleviates, to some extent, the aforementioned downsides of both SOI and bulk FinFET but with the increased fabrication complexity . Here, we report extensive simulation of BOI and SOI FinFETs using technology computer aided design (TCAD)  and for the first time, present evaluation of BOI and SOI FinFET based digital circuits and demonstrate that in actuality SHE is comparable for both circuits under low voltage bias.