Charge modulation spectra in phosphorus-doped a-Si:H

J. Lyou; N. Kopidakis; E. A. Schiff

doi:10.1016/s0022-3093(99)00826-1

Charge modulation spectra in phosphorus-doped a-Si:H

J. Lyou, N. Kopidakis, E. A. Schiff

Department of Physics

Research output: Contribution to journal › Conference Article › peer-review

3 Scopus citations

Abstract

We discuss models for the infrared spectrum peaked at 0.8 eV reported in voltage-modulated optical absorption measurements on a-Si:H based diodes. We associate this spectrum with interface charge modulation of the optical properties of the phosphorus-doped a-Si:H used as one electrode. We propose that the spectrum originates with the internal optical transitions of a complex incorporating four-fold coordinated phosphorus and a dangling bond. We discuss prior evidence against complexing, and suggest further experiments.

Original language	English (US)
Pages (from-to)	227-231
Number of pages	5
Journal	Journal of Non-Crystalline Solids
Volume	266-269 A
DOIs	https://doi.org/10.1016/s0022-3093(99)00826-1
State	Published - May 1 2000
Event	18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) - Snowbird, UT, United States Duration: Aug 23 1999 → Aug 27 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/s0022-3093(99)00826-1

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@article{6615002d8a9b401bbbd1e8803e764236,

title = "Charge modulation spectra in phosphorus-doped a-Si:H",

abstract = "We discuss models for the infrared spectrum peaked at 0.8 eV reported in voltage-modulated optical absorption measurements on a-Si:H based diodes. We associate this spectrum with interface charge modulation of the optical properties of the phosphorus-doped a-Si:H used as one electrode. We propose that the spectrum originates with the internal optical transitions of a complex incorporating four-fold coordinated phosphorus and a dangling bond. We discuss prior evidence against complexing, and suggest further experiments.",

author = "J. Lyou and N. Kopidakis and Schiff, {E. A.}",

note = "Funding Information: The sample used in the measurements of Fig. 1 was provided through the courtesy of J. Yang of United Solar Systems Corporation. This research was supported by the Thin Film Photovoltaic Partnership of the National Renewable Energy Laboratory and by the Korea Research Fund. ; 18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) ; Conference date: 23-08-1999 Through 27-08-1999",

year = "2000",

month = may,

day = "1",

doi = "10.1016/s0022-3093(99)00826-1",

language = "English (US)",

volume = "266-269 A",

pages = "227--231",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier",

}

TY - JOUR

T1 - Charge modulation spectra in phosphorus-doped a-Si:H

AU - Lyou, J.

AU - Kopidakis, N.

AU - Schiff, E. A.

N1 - Funding Information: The sample used in the measurements of Fig. 1 was provided through the courtesy of J. Yang of United Solar Systems Corporation. This research was supported by the Thin Film Photovoltaic Partnership of the National Renewable Energy Laboratory and by the Korea Research Fund.

PY - 2000/5/1

Y1 - 2000/5/1

N2 - We discuss models for the infrared spectrum peaked at 0.8 eV reported in voltage-modulated optical absorption measurements on a-Si:H based diodes. We associate this spectrum with interface charge modulation of the optical properties of the phosphorus-doped a-Si:H used as one electrode. We propose that the spectrum originates with the internal optical transitions of a complex incorporating four-fold coordinated phosphorus and a dangling bond. We discuss prior evidence against complexing, and suggest further experiments.

AB - We discuss models for the infrared spectrum peaked at 0.8 eV reported in voltage-modulated optical absorption measurements on a-Si:H based diodes. We associate this spectrum with interface charge modulation of the optical properties of the phosphorus-doped a-Si:H used as one electrode. We propose that the spectrum originates with the internal optical transitions of a complex incorporating four-fold coordinated phosphorus and a dangling bond. We discuss prior evidence against complexing, and suggest further experiments.

UR - http://www.scopus.com/inward/record.url?scp=0000163638&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000163638&partnerID=8YFLogxK

U2 - 10.1016/s0022-3093(99)00826-1

DO - 10.1016/s0022-3093(99)00826-1

M3 - Conference Article

AN - SCOPUS:0000163638

SN - 0022-3093

VL - 266-269 A

SP - 227

EP - 231

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

T2 - 18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18)

Y2 - 23 August 1999 through 27 August 1999

ER -

Charge modulation spectra in phosphorus-doped a-Si:H

Abstract

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