Characterization of submonolayer growth of Cu islands on Cu(001)

G. T. Barkema; Ofer Biham; M. Breeman; D. O. Boerma; Gianfranco Vidali

doi:10.1016/0039-6028(94)90068-X

Characterization of submonolayer growth of Cu islands on Cu(001)

G. T. Barkema, Ofer Biham, M. Breeman, D. O. Boerma, Gianfranco Vidali

Department of Physics

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

Submonolayer island growth of Cu on Cu(001) is simulated using energy barriers derived by the atomembedding method of Finnis and Sinclair. We find that the island density during deposition quickly saturates and forms a plateau over a range of the coverage θ. We observe that due to high edge mobility the islands form compact shapes and that the average island size R scales like R ~ θⁿ where n≈ 0.5, in agreement with recent experiments.

Original language	English (US)
Pages (from-to)	L569-L574
Journal	Surface Science
Volume	306
Issue number	3
DOIs	https://doi.org/10.1016/0039-6028(94)90068-X
State	Published - Apr 10 1994

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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abstract = "Submonolayer island growth of Cu on Cu(001) is simulated using energy barriers derived by the atomembedding method of Finnis and Sinclair. We find that the island density during deposition quickly saturates and forms a plateau over a range of the coverage θ. We observe that due to high edge mobility the islands form compact shapes and that the average island size R scales like R ~ θn where n≈ 0.5, in agreement with recent experiments.",

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AU - Biham, Ofer

AU - Breeman, M.

AU - Boerma, D. O.

AU - Vidali, Gianfranco

PY - 1994/4/10

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N2 - Submonolayer island growth of Cu on Cu(001) is simulated using energy barriers derived by the atomembedding method of Finnis and Sinclair. We find that the island density during deposition quickly saturates and forms a plateau over a range of the coverage θ. We observe that due to high edge mobility the islands form compact shapes and that the average island size R scales like R ~ θn where n≈ 0.5, in agreement with recent experiments.

AB - Submonolayer island growth of Cu on Cu(001) is simulated using energy barriers derived by the atomembedding method of Finnis and Sinclair. We find that the island density during deposition quickly saturates and forms a plateau over a range of the coverage θ. We observe that due to high edge mobility the islands form compact shapes and that the average island size R scales like R ~ θn where n≈ 0.5, in agreement with recent experiments.

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