Two metallorganic phosphorous precursors, bisphosphinoethane (BPE) and tertiarybutyl phosphine (TBP), were studied. For indium phosphide (InP) grown using BPE, the measured room temperature and 77 K Hall mobilities were 4,200 and 22,000 cm2/Vs, with carrier densities 5.7E15 and 4.0E15 cm-3, respectively. For InP grown using TBP, the measured room temperature and 77 K Hall mobilities were 4,400 and 26,000 cm2/Vs, with carrier densities 6.4E15 and 5.1E15 cm-3, respectively. An impurity build-up at the substrate interface is responsible for the relatively low mobility in the adjacent epitaxial layers. SIMS analysis showed that S and Si are the primary impurities measured in films grown with BPE and TBP, respectively; impurity concentrations increased with cracking temperature. The full width at half maximum (FWHM) of donor bound exciton peaks measured by 2.2 K photoluminescence for InP grown by BPE and TBP were 0.84 and 1.28 meV, respectively.