TY - GEN
T1 - CBE growth of InP with triethylindium and metalorganic phosphorous precursors
T2 - Proceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials
AU - Chin, Albert
AU - Hersee, Steve
AU - Martin, Paul
AU - Mazurowski, John
AU - Ballingall, James
AU - Glass, J. A.
AU - Spencer, James T.
PY - 1993
Y1 - 1993
N2 - Two metallorganic phosphorous precursors, bisphosphinoethane (BPE) and tertiarybutyl phosphine (TBP), were studied. For indium phosphide (InP) grown using BPE, the measured room temperature and 77 K Hall mobilities were 4,200 and 22,000 cm2/Vs, with carrier densities 5.7E15 and 4.0E15 cm-3, respectively. For InP grown using TBP, the measured room temperature and 77 K Hall mobilities were 4,400 and 26,000 cm2/Vs, with carrier densities 6.4E15 and 5.1E15 cm-3, respectively. An impurity build-up at the substrate interface is responsible for the relatively low mobility in the adjacent epitaxial layers. SIMS analysis showed that S and Si are the primary impurities measured in films grown with BPE and TBP, respectively; impurity concentrations increased with cracking temperature. The full width at half maximum (FWHM) of donor bound exciton peaks measured by 2.2 K photoluminescence for InP grown by BPE and TBP were 0.84 and 1.28 meV, respectively.
AB - Two metallorganic phosphorous precursors, bisphosphinoethane (BPE) and tertiarybutyl phosphine (TBP), were studied. For indium phosphide (InP) grown using BPE, the measured room temperature and 77 K Hall mobilities were 4,200 and 22,000 cm2/Vs, with carrier densities 5.7E15 and 4.0E15 cm-3, respectively. For InP grown using TBP, the measured room temperature and 77 K Hall mobilities were 4,400 and 26,000 cm2/Vs, with carrier densities 6.4E15 and 5.1E15 cm-3, respectively. An impurity build-up at the substrate interface is responsible for the relatively low mobility in the adjacent epitaxial layers. SIMS analysis showed that S and Si are the primary impurities measured in films grown with BPE and TBP, respectively; impurity concentrations increased with cracking temperature. The full width at half maximum (FWHM) of donor bound exciton peaks measured by 2.2 K photoluminescence for InP grown by BPE and TBP were 0.84 and 1.28 meV, respectively.
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M3 - Conference contribution
AN - SCOPUS:0027306989
SN - 1558991778
T3 - Materials Research Society Symposium Proceedings
SP - 45
EP - 50
BT - Chemical Perspectives of Microelectronic Materials III
PB - Publ by Materials Research Society
Y2 - 30 November 1992 through 3 December 1992
ER -