Abstract
Hole drift mobilities in hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) are in the range of 10 -3 to 1 cm 2/Vs at room-temperature. These low drift mobilities establish corresponding hole mobility limits to the power generation and useful thicknesses of the solar cells. The properties of as-deposited a-Si:H nip solar cells are quite close to their hole mobility limit, but the corresponding limit has not been examined for nc-Si:H solar cells. We explore the predictions for nc-Si:H solar cells based on parameters and values estimated from hole drift-mobility and related measurements. The indicate that the hole mobility limit for nc-Si:H cells corresponds to an optimum intrinsic-layer thickness of 2-3 μm, whereas the best nc-Si:H solar cells (10% conversion efficiency) have thicknesses around 2 μm.
| Original language | English (US) |
|---|---|
| Title of host publication | Materials Research Society Symposium Proceedings |
| Pages | 269-280 |
| Number of pages | 12 |
| Volume | 1153 |
| State | Published - 2009 |
| Event | 2009 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 14 2009 → Apr 16 2009 |
Other
| Other | 2009 MRS Spring Meeting |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 4/14/09 → 4/16/09 |
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ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
- Mechanics of Materials
Cite this
Carrier drift-mobilities and solar cell models for amorphous and nanocrystalline silicon. / Schiff, Eric Allan.
Materials Research Society Symposium Proceedings. Vol. 1153 2009. p. 269-280.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Carrier drift-mobilities and solar cell models for amorphous and nanocrystalline silicon
AU - Schiff, Eric Allan
PY - 2009
Y1 - 2009
N2 - Hole drift mobilities in hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) are in the range of 10 -3 to 1 cm 2/Vs at room-temperature. These low drift mobilities establish corresponding hole mobility limits to the power generation and useful thicknesses of the solar cells. The properties of as-deposited a-Si:H nip solar cells are quite close to their hole mobility limit, but the corresponding limit has not been examined for nc-Si:H solar cells. We explore the predictions for nc-Si:H solar cells based on parameters and values estimated from hole drift-mobility and related measurements. The indicate that the hole mobility limit for nc-Si:H cells corresponds to an optimum intrinsic-layer thickness of 2-3 μm, whereas the best nc-Si:H solar cells (10% conversion efficiency) have thicknesses around 2 μm.
AB - Hole drift mobilities in hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) are in the range of 10 -3 to 1 cm 2/Vs at room-temperature. These low drift mobilities establish corresponding hole mobility limits to the power generation and useful thicknesses of the solar cells. The properties of as-deposited a-Si:H nip solar cells are quite close to their hole mobility limit, but the corresponding limit has not been examined for nc-Si:H solar cells. We explore the predictions for nc-Si:H solar cells based on parameters and values estimated from hole drift-mobility and related measurements. The indicate that the hole mobility limit for nc-Si:H cells corresponds to an optimum intrinsic-layer thickness of 2-3 μm, whereas the best nc-Si:H solar cells (10% conversion efficiency) have thicknesses around 2 μm.
UR - http://www.scopus.com/inward/record.url?scp=77951123425&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77951123425&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:77951123425
SN - 9781605111261
VL - 1153
SP - 269
EP - 280
BT - Materials Research Society Symposium Proceedings
ER -