TY - GEN
T1 - Carrier drift-mobilities and solar cell models for amorphous and nanocrystalline silicon
AU - Schiff, E. A.
N1 - Funding Information:
Thank you to Paul Downton, the residents of Christie Walk, SA Water, Transport SA, Planning SA, the SA Office of Sustainability, Stephen Pullen, Monica Oliphant, Veronica Soebarto, Terry Williamson, Patrick Troy, June Marks and everyone else who has helped and supported this work.
PY - 2009
Y1 - 2009
N2 - Hole drift mobilities in hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) are in the range of 10-3 to 1 cm2/Vs at room-temperature. These low drift mobilities establish corresponding hole mobility limits to the power generation and useful thicknesses of the solar cells. The properties of as-deposited a-Si:H nip solar cells are quite close to their hole mobility limit, but the corresponding limit has not been examined for nc-Si:H solar cells. We explore the predictions for nc-Si:H solar cells based on parameters and values estimated from hole drift-mobility and related measurements. The indicate that the hole mobility limit for nc-Si:H cells corresponds to an optimum intrinsic-layer thickness of 2-3 μm, whereas the best nc-Si:H solar cells (10% conversion efficiency) have thicknesses around 2 μm.
AB - Hole drift mobilities in hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) are in the range of 10-3 to 1 cm2/Vs at room-temperature. These low drift mobilities establish corresponding hole mobility limits to the power generation and useful thicknesses of the solar cells. The properties of as-deposited a-Si:H nip solar cells are quite close to their hole mobility limit, but the corresponding limit has not been examined for nc-Si:H solar cells. We explore the predictions for nc-Si:H solar cells based on parameters and values estimated from hole drift-mobility and related measurements. The indicate that the hole mobility limit for nc-Si:H cells corresponds to an optimum intrinsic-layer thickness of 2-3 μm, whereas the best nc-Si:H solar cells (10% conversion efficiency) have thicknesses around 2 μm.
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U2 - 10.1557/proc-1153-a15-01
DO - 10.1557/proc-1153-a15-01
M3 - Conference contribution
AN - SCOPUS:77951123425
SN - 9781605111261
T3 - Materials Research Society Symposium Proceedings
SP - 269
EP - 280
BT - Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009
PB - Materials Research Society
T2 - 2009 MRS Spring Meeting
Y2 - 14 April 2009 through 16 April 2009
ER -