Carrier drift-mobilities and solar cell models for amorphous and nanocrystalline silicon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Hole drift mobilities in hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) are in the range of 10 -3 to 1 cm 2/Vs at room-temperature. These low drift mobilities establish corresponding hole mobility limits to the power generation and useful thicknesses of the solar cells. The properties of as-deposited a-Si:H nip solar cells are quite close to their hole mobility limit, but the corresponding limit has not been examined for nc-Si:H solar cells. We explore the predictions for nc-Si:H solar cells based on parameters and values estimated from hole drift-mobility and related measurements. The indicate that the hole mobility limit for nc-Si:H cells corresponds to an optimum intrinsic-layer thickness of 2-3 μm, whereas the best nc-Si:H solar cells (10% conversion efficiency) have thicknesses around 2 μm.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages269-280
Number of pages12
Volume1153
StatePublished - 2009
Event2009 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 14 2009Apr 16 2009

Other

Other2009 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/14/094/16/09

Fingerprint

Nanocrystalline silicon
Amorphous silicon
amorphous silicon
Solar cells
solar cells
Hole mobility
hole mobility
silicon
cells
Conversion efficiency
Power generation
room temperature
predictions

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Schiff, E. A. (2009). Carrier drift-mobilities and solar cell models for amorphous and nanocrystalline silicon. In Materials Research Society Symposium Proceedings (Vol. 1153, pp. 269-280)

Carrier drift-mobilities and solar cell models for amorphous and nanocrystalline silicon. / Schiff, Eric Allan.

Materials Research Society Symposium Proceedings. Vol. 1153 2009. p. 269-280.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Schiff, EA 2009, Carrier drift-mobilities and solar cell models for amorphous and nanocrystalline silicon. in Materials Research Society Symposium Proceedings. vol. 1153, pp. 269-280, 2009 MRS Spring Meeting, San Francisco, CA, United States, 4/14/09.
Schiff EA. Carrier drift-mobilities and solar cell models for amorphous and nanocrystalline silicon. In Materials Research Society Symposium Proceedings. Vol. 1153. 2009. p. 269-280
Schiff, Eric Allan. / Carrier drift-mobilities and solar cell models for amorphous and nanocrystalline silicon. Materials Research Society Symposium Proceedings. Vol. 1153 2009. pp. 269-280
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