Carrier drift-mobilities and solar cell models for amorphous and nanocrystalline silicon

E. A. Schiff

doi:10.1557/proc-1153-a15-01

Carrier drift-mobilities and solar cell models for amorphous and nanocrystalline silicon

E. A. Schiff

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

Hole drift mobilities in hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) are in the range of 10^-3 to 1 cm²/Vs at room-temperature. These low drift mobilities establish corresponding hole mobility limits to the power generation and useful thicknesses of the solar cells. The properties of as-deposited a-Si:H nip solar cells are quite close to their hole mobility limit, but the corresponding limit has not been examined for nc-Si:H solar cells. We explore the predictions for nc-Si:H solar cells based on parameters and values estimated from hole drift-mobility and related measurements. The indicate that the hole mobility limit for nc-Si:H cells corresponds to an optimum intrinsic-layer thickness of 2-3 μm, whereas the best nc-Si:H solar cells (10% conversion efficiency) have thicknesses around 2 μm.

Original language	English (US)
Title of host publication	Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009
Publisher	Materials Research Society
Pages	269-280
Number of pages	12
ISBN (Print)	9781605111261
DOIs	https://doi.org/10.1557/proc-1153-a15-01
State	Published - 2009
Event	2009 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 14 2009 → Apr 16 2009

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1153
ISSN (Print)	0272-9172

Other

Other	2009 MRS Spring Meeting
Country	United States
City	San Francisco, CA
Period	4/14/09 → 4/16/09

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Carrier drift-mobilities and solar cell models for amorphous and nanocrystalline silicon. / Schiff, E. A.

Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009. Materials Research Society, 2009. p. 269-280 (Materials Research Society Symposium Proceedings; Vol. 1153).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Schiff, EA 2009, Carrier drift-mobilities and solar cell models for amorphous and nanocrystalline silicon. in Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009. Materials Research Society Symposium Proceedings, vol. 1153, Materials Research Society, pp. 269-280, 2009 MRS Spring Meeting, San Francisco, CA, United States, 4/14/09. https://doi.org/10.1557/proc-1153-a15-01

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abstract = "Hole drift mobilities in hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) are in the range of 10-3 to 1 cm2/Vs at room-temperature. These low drift mobilities establish corresponding hole mobility limits to the power generation and useful thicknesses of the solar cells. The properties of as-deposited a-Si:H nip solar cells are quite close to their hole mobility limit, but the corresponding limit has not been examined for nc-Si:H solar cells. We explore the predictions for nc-Si:H solar cells based on parameters and values estimated from hole drift-mobility and related measurements. The indicate that the hole mobility limit for nc-Si:H cells corresponds to an optimum intrinsic-layer thickness of 2-3 μm, whereas the best nc-Si:H solar cells (10% conversion efficiency) have thicknesses around 2 μm.",

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