TY - GEN
T1 - Carrier drift-mobilities and solar cell models for amorphous and nanocrystalline silicon
AU - Schiff, E. A.
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2009
Y1 - 2009
N2 - Hole drift mobilities in hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) are in the range of 10-3 to 1 cm2/Vs at room-temperature. These low drift mobilities establish corresponding hole mobility limits to the power generation and useful thicknesses of the solar cells. The properties of as-deposited a-Si:H nip solar cells are quite close to their hole mobility limit, but the corresponding limit has not been examined for nc-Si:H solar cells. We explore the predictions for nc-Si:H solar cells based on parameters and values estimated from hole drift-mobility and related measurements. The indicate that the hole mobility limit for nc-Si:H cells corresponds to an optimum intrinsic-layer thickness of 2-3 μm, whereas the best nc-Si:H solar cells (10% conversion efficiency) have thicknesses around 2 μm.
AB - Hole drift mobilities in hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) are in the range of 10-3 to 1 cm2/Vs at room-temperature. These low drift mobilities establish corresponding hole mobility limits to the power generation and useful thicknesses of the solar cells. The properties of as-deposited a-Si:H nip solar cells are quite close to their hole mobility limit, but the corresponding limit has not been examined for nc-Si:H solar cells. We explore the predictions for nc-Si:H solar cells based on parameters and values estimated from hole drift-mobility and related measurements. The indicate that the hole mobility limit for nc-Si:H cells corresponds to an optimum intrinsic-layer thickness of 2-3 μm, whereas the best nc-Si:H solar cells (10% conversion efficiency) have thicknesses around 2 μm.
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U2 - 10.1557/proc-1153-a15-01
DO - 10.1557/proc-1153-a15-01
M3 - Conference contribution
AN - SCOPUS:77951123425
SN - 9781605111261
T3 - Materials Research Society Symposium Proceedings
SP - 269
EP - 280
BT - Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009
PB - Materials Research Society
T2 - 2009 MRS Spring Meeting
Y2 - 14 April 2009 through 16 April 2009
ER -