Cadmium telluride thin films on silicon substrates

T. C. Kuo; Y. T. Chi; P. K. Ghosh; P. G. Kornreich; J. Beasock

doi:10.1016/0040-6090(91)90224-L

Cadmium telluride thin films on silicon substrates

T. C. Kuo, Y. T. Chi, P. K. Ghosh, P. G. Kornreich, J. Beasock

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We report here the epitaxial growth of CdTe films on silicon substrates by the use of a closed hot wall epitaxy (CHWE) system. Deposition parameters were varied in order to determine the growth condition for obtaining good quality CdTe films. The characteristics of the films were investigated by scanning electron microscopy, X-ray diffraction and Auger electron spectroscopy. Experimental data show that no film grows when the source temperature is below 450 °C. The film growth changes linearly with source temperature at a rate 0.0252 Å s^-1 °C^-1, and the best film was grown at a source temperature of 475°C. We found that the lattice constant of our CdTe films is 6.487 ± 0.004 Å.

Original language	English (US)
Pages (from-to)	107-115
Number of pages	9
Journal	Thin Solid Films
Volume	197
Issue number	1-2
DOIs	https://doi.org/10.1016/0040-6090(91)90224-L
State	Published - Mar 10 1991
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(91)90224-L

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title = "Cadmium telluride thin films on silicon substrates",

abstract = "We report here the epitaxial growth of CdTe films on silicon substrates by the use of a closed hot wall epitaxy (CHWE) system. Deposition parameters were varied in order to determine the growth condition for obtaining good quality CdTe films. The characteristics of the films were investigated by scanning electron microscopy, X-ray diffraction and Auger electron spectroscopy. Experimental data show that no film grows when the source temperature is below 450 °C. The film growth changes linearly with source temperature at a rate 0.0252 {\AA} s-1 °C-1, and the best film was grown at a source temperature of 475°C. We found that the lattice constant of our CdTe films is 6.487 ± 0.004 {\AA}.",

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T1 - Cadmium telluride thin films on silicon substrates

AU - Kuo, T. C.

AU - Chi, Y. T.

AU - Ghosh, P. K.

AU - Kornreich, P. G.

AU - Beasock, J.

PY - 1991/3/10

Y1 - 1991/3/10

N2 - We report here the epitaxial growth of CdTe films on silicon substrates by the use of a closed hot wall epitaxy (CHWE) system. Deposition parameters were varied in order to determine the growth condition for obtaining good quality CdTe films. The characteristics of the films were investigated by scanning electron microscopy, X-ray diffraction and Auger electron spectroscopy. Experimental data show that no film grows when the source temperature is below 450 °C. The film growth changes linearly with source temperature at a rate 0.0252 Å s-1 °C-1, and the best film was grown at a source temperature of 475°C. We found that the lattice constant of our CdTe films is 6.487 ± 0.004 Å.

AB - We report here the epitaxial growth of CdTe films on silicon substrates by the use of a closed hot wall epitaxy (CHWE) system. Deposition parameters were varied in order to determine the growth condition for obtaining good quality CdTe films. The characteristics of the films were investigated by scanning electron microscopy, X-ray diffraction and Auger electron spectroscopy. Experimental data show that no film grows when the source temperature is below 450 °C. The film growth changes linearly with source temperature at a rate 0.0252 Å s-1 °C-1, and the best film was grown at a source temperature of 475°C. We found that the lattice constant of our CdTe films is 6.487 ± 0.004 Å.

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Cadmium telluride thin films on silicon substrates

Abstract

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