Cadmium telluride thin films on silicon substrates

T. C. Kuo, Y. T. Chi, P. K. Ghosh, P. G. Kornreich, J. Beasock

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

We report here the epitaxial growth of CdTe films on silicon substrates by the use of a closed hot wall epitaxy (CHWE) system. Deposition parameters were varied in order to determine the growth condition for obtaining good quality CdTe films. The characteristics of the films were investigated by scanning electron microscopy, X-ray diffraction and Auger electron spectroscopy. Experimental data show that no film grows when the source temperature is below 450 °C. The film growth changes linearly with source temperature at a rate 0.0252 Å s-1 °C-1, and the best film was grown at a source temperature of 475°C. We found that the lattice constant of our CdTe films is 6.487 ± 0.004 Å.

Original languageEnglish (US)
Pages (from-to)107-115
Number of pages9
JournalThin Solid Films
Volume197
Issue number1-2
DOIs
StatePublished - Mar 10 1991

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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    Kuo, T. C., Chi, Y. T., Ghosh, P. K., Kornreich, P. G., & Beasock, J. (1991). Cadmium telluride thin films on silicon substrates. Thin Solid Films, 197(1-2), 107-115. https://doi.org/10.1016/0040-6090(91)90224-L