Built-in potentials via electroabsorption measurements in a-Si:H p-i-n solar cells: A critical assessment

Qi Wang, E. A. Schiff, Steven S. Hegcdus

Research output: Chapter in Book/Entry/PoemConference contribution

6 Scopus citations


We have measured electroahsorption (EA) in a-Si:H p-i-n solar cells in order to estimate their built-in potentials Vbr. This method was pioneered by the Osaka University group; in simple cases Vbi is identified with a parameter V0 obtained by a simple linear fit to the dependence of EA on external bias voltage. Using signal averaging techniques we are able to measure V0 with a reproducibility of better than 2%. In one sample from the Institute of Energy Conversion with an a-SiC:H p+ layer we estimate Vbi = 0.97 ± 0.06 V, which is in good agreement with previous JVT measurement. The reason that the error estimate is larger than the reproducibility error is the presence of several small effects not accounted for by the original EA theory: in particular V0depends slightly on the laser wavelength. We attribute these effects to the small portion of Vbidropped in the a-SiC:H p+ layer, which has a different electroabsorption than a-Si:H. We discuss models for the wavelength dependence.

Original languageEnglish (US)
Title of host publicationAmorphous Silicon Technology - 1994
PublisherMaterials Research Society
Number of pages6
ISBN (Print)1558992367, 9781558992368
StatePublished - 1994
Event1994 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 4 1994Apr 8 1994

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other1994 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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