Built-in potentials via electroabsorption measurements in a-Si: H p-i-n solar cells: A critical assessment

Qi Wang, Eric Allan Schiff, Steven S. Hegcdus

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

We have measured electroahsorption (EA) in a-Si:H p-i-n solar cells in order to estimate their built-in potentials Vbr. This method was pioneered by the Osaka University group; in simple cases Vbi is identified with a parameter V0 obtained by a simple linear fit to the dependence of EA on external bias voltage. Using signal averaging techniques we are able to measure V0 with a reproducibility of better than 2%. In one sample from the Institute of Energy Conversion with an a-SiC:H p+ layer we estimate Vbi = 0.97 ± 0.06 V, which is in good agreement with previous JVT measurement. The reason that the error estimate is larger than the reproducibility error is the presence of several small effects not accounted for by the original EA theory: in particular V0depends slightly on the laser wavelength. We attribute these effects to the small portion of Vbidropped in the a-SiC:H p+ layer, which has a different electroabsorption than a-Si:H. We discuss models for the wavelength dependence.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages365-370
Number of pages6
Volume336
StatePublished - 1994
Event1994 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 4 1994Apr 8 1994

Other

Other1994 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/4/944/8/94

    Fingerprint

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Wang, Q., Schiff, E. A., & Hegcdus, S. S. (1994). Built-in potentials via electroabsorption measurements in a-Si: H p-i-n solar cells: A critical assessment. In Materials Research Society Symposium Proceedings (Vol. 336, pp. 365-370)