Abstract
We describe a model for a-Si:H based pin solar cells derived primarily from valence bandtail properties. We show how hole drift-mobility measurements and measurements of the temperature-dependence of the open-circuit voltage VOC can be used to estimate the parameters, and we present V OC(T) measurements. We compared the power density under solar illumination calculated with this model with published results for as-deposited a-Si:H solar cells. The agreement is within 4% for a range of thicknesses, suggesting that the power from as-deposited cells is close to the bandtail limit.
Original language | English (US) |
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Pages (from-to) | 297-302 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 762 |
DOIs | |
State | Published - 2003 |
Event | Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003 - San Francisco, CA, United States Duration: Apr 22 2003 → Apr 25 2003 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering