Anisotropic drift mobility in hydrogenated amorphous silicon

M. A. Parker, E. A. Schiff

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

The dependence upon the electric field direction of the electron photocarrier transient drift mobility was measured in amorphous hydrogenated silicon (-Si:H) using transient photocurrent and time-of-flight spectroscopy. In contrast with the frequent assumption of microscopically isotropic transport in noncrystalline materials, the measurements indicate that the electron drift mobility is anisotropic in -Si:H. The ratio of axial measurements (along the growth axis) and planar measurements (parallel to the surface) can exceed an order of magnitude. Certain problems with previous transport-based characterizations of -Si:H may be resolved by anisotropic mobility effects.

Original languageEnglish (US)
Pages (from-to)10426-10428
Number of pages3
JournalPhysical Review B
Volume37
Issue number17
DOIs
StatePublished - Jan 1 1988

ASJC Scopus subject areas

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Anisotropic drift mobility in hydrogenated amorphous silicon'. Together they form a unique fingerprint.

  • Cite this