Analyzing the dark silicon phenomenon in a many-core chip multi-processor under deeply-scaled process technologies

Alireza Shafaei, Yuankun Xue, Yanzhi Wang, Paul Bogdan, Srikanth Ramadurgam, Massoud Pedram

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

The impact of dark silicon phenomenon on multicore processors under deeply-scaled FinFET technologies is investigated in this paper. To do this accurately, a cross-layer framework, spanning device, circuit, and architecture levels is initially introduced. Using this framework, leakage and dynamic power consumptions as well as frequency levels of in-order and out-of-order (OoO) processor cores, and on-chip cache memories and routers in a network-on-chip-based chip multiprocessor system synthesized in 7nm FinFET technology and operating in both super-and near-threshold voltage regimes are presented. Subsequently, total power consumptions of multicore chips manufactured with (i) OoO and (ii) in-order processor cores are reported and compared. According to our results, for a 64-core chip and 15W thermal design power budget, 64% and 39% dark silicon are observed in OoO and in-order multicores, respectively, under super-threshold regime. These percentages drop to 19% and 0% for OoO and in-order multicores operating in the near-threshold regime, respectively. Furthermore, the highest energy efficiencies are achieved by operating in the nearthreshold regime, which points to the effectiveness of near-threshold computing in mitigating the effect of dark silicon phenomenon under deeply-scaled technologies.

Original languageEnglish (US)
Title of host publicationProceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI
PublisherAssociation for Computing Machinery
Pages127-132
Number of pages6
Volume20-22-May-2015
ISBN (Print)9781450334747
DOIs
StatePublished - May 20 2015
Externally publishedYes
Event25th Great Lakes Symposium on VLSI, GLSVLSI 2015 - Pittsburgh, United States
Duration: May 20 2015May 22 2015

Other

Other25th Great Lakes Symposium on VLSI, GLSVLSI 2015
CountryUnited States
CityPittsburgh
Period5/20/155/22/15

Keywords

  • Dark silicon
  • FinFET devices
  • Near-threshold computing

ASJC Scopus subject areas

  • Engineering(all)

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    Shafaei, A., Xue, Y., Wang, Y., Bogdan, P., Ramadurgam, S., & Pedram, M. (2015). Analyzing the dark silicon phenomenon in a many-core chip multi-processor under deeply-scaled process technologies. In Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI (Vol. 20-22-May-2015, pp. 127-132). Association for Computing Machinery. https://doi.org/10.1145/2742060.2742096