An efficient semi-analytical current source model for FinFET devices in near/sub-threshold regime considering multiple input switching and stack effect

Tiansong Cui, Shuang Chen, Yanzhi Wang, Shahin Nazarian, Massoud Pedram

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Nanoscale FinFET devices are emerging as the transistor of choice in 32nm CMOS technologies and beyond. This is due to their more effective channel control, higher ON/OFF current ratios, and lower energy consumption. This paper presents an efficient current source model (CSM) for FinFET devices operating in the near/sub-threshold regime, considering multiple input switching (MIS) and accounting for the effect of internal node voltages of the logic cell. The main problem of the traditional MIS model is that it requires high-dimensional lookup tables. In this paper, we combine non-linear analytical models and low-dimensional CSM lookup tables to simultaneously achieve high modeling accuracy and time/space efficiency. The proposed framework is verified by experimental results on the 32nm Predictive Technology Model for FinFET devices.

Original languageEnglish (US)
Title of host publicationProceedings of the 15th International Symposium on Quality Electronic Design, ISQED 2014
PublisherIEEE Computer Society
Pages575-581
Number of pages7
ISBN (Print)9781479939466
DOIs
StatePublished - Jan 1 2014
Event15th International Symposium on Quality Electronic Design, ISQED 2014 - Santa Clara, CA, United States
Duration: Mar 3 2014Mar 5 2014

Publication series

NameProceedings - International Symposium on Quality Electronic Design, ISQED
ISSN (Print)1948-3287
ISSN (Electronic)1948-3295

Other

Other15th International Symposium on Quality Electronic Design, ISQED 2014
CountryUnited States
CitySanta Clara, CA
Period3/3/143/5/14

Keywords

  • Current source model (CSM)
  • FinFET
  • Multiple input switching (MIS)
  • Stack effect

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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  • Cite this

    Cui, T., Chen, S., Wang, Y., Nazarian, S., & Pedram, M. (2014). An efficient semi-analytical current source model for FinFET devices in near/sub-threshold regime considering multiple input switching and stack effect. In Proceedings of the 15th International Symposium on Quality Electronic Design, ISQED 2014 (pp. 575-581). [6783378] (Proceedings - International Symposium on Quality Electronic Design, ISQED). IEEE Computer Society. https://doi.org/10.1109/ISQED.2014.6783378