Amorphous silicon/polyaniline heterojunction solar cells: Fermi levels and open-circuit voltages

Weining Wang, Eric Allan Schiff, Qi Wang

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

We fabricated hydrogenated amorphous silicon/polyaniline n-i-p heterojunction solar cells incorporating a doped, hole conducting polyaniline (PANI) layer. The cells were prepared by spin-casting differing polyaniline dispersions corresponding to film conductivities ranging from 10-2 to 102 S/m. The open-circuit voltages VOC of the cells ranged from 0.5-0.7 V. While these open-circuit voltages are lower than for the best a-Si:H cells utilizing nanocrystalline Si or a-SiC:H p-layers, they illustrate well how open-circuit voltages are limited by the work function of the contacting material. They also give insight into the mechanism limiting VOC for crystal silicon/PANI n/p solar cells, for which VOC varies little for PANI conductivities greater than 10-1 S/cm. The comparison excludes electrophoresis effects in the PANI as the limiting mechanism.

Original languageEnglish (US)
Pages (from-to)2862-2865
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume354
Issue number19-25
DOIs
StatePublished - May 1 2008

Fingerprint

volatile organic compounds
Open circuit voltage
Polyaniline
Fermi level
open circuit voltage
Amorphous silicon
amorphous silicon
Heterojunctions
heterojunctions
Solar cells
solar cells
cells
Volatile organic compounds
conductivity
electrophoresis
conduction
silicon
Silicon
Electrophoresis
Dispersions

Keywords

  • Solar cells

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Amorphous silicon/polyaniline heterojunction solar cells : Fermi levels and open-circuit voltages. / Wang, Weining; Schiff, Eric Allan; Wang, Qi.

In: Journal of Non-Crystalline Solids, Vol. 354, No. 19-25, 01.05.2008, p. 2862-2865.

Research output: Contribution to journalArticle

@article{39d6226841044fb6a6447b5f5a23cd94,
title = "Amorphous silicon/polyaniline heterojunction solar cells: Fermi levels and open-circuit voltages",
abstract = "We fabricated hydrogenated amorphous silicon/polyaniline n-i-p heterojunction solar cells incorporating a doped, hole conducting polyaniline (PANI) layer. The cells were prepared by spin-casting differing polyaniline dispersions corresponding to film conductivities ranging from 10-2 to 102 S/m. The open-circuit voltages VOC of the cells ranged from 0.5-0.7 V. While these open-circuit voltages are lower than for the best a-Si:H cells utilizing nanocrystalline Si or a-SiC:H p-layers, they illustrate well how open-circuit voltages are limited by the work function of the contacting material. They also give insight into the mechanism limiting VOC for crystal silicon/PANI n/p solar cells, for which VOC varies little for PANI conductivities greater than 10-1 S/cm. The comparison excludes electrophoresis effects in the PANI as the limiting mechanism.",
keywords = "Solar cells",
author = "Weining Wang and Schiff, {Eric Allan} and Qi Wang",
year = "2008",
month = "5",
day = "1",
doi = "10.1016/j.jnoncrysol.2007.10.104",
language = "English (US)",
volume = "354",
pages = "2862--2865",
journal = "Journal of Non-Crystalline Solids",
issn = "0022-3093",
publisher = "Elsevier",
number = "19-25",

}

TY - JOUR

T1 - Amorphous silicon/polyaniline heterojunction solar cells

T2 - Fermi levels and open-circuit voltages

AU - Wang, Weining

AU - Schiff, Eric Allan

AU - Wang, Qi

PY - 2008/5/1

Y1 - 2008/5/1

N2 - We fabricated hydrogenated amorphous silicon/polyaniline n-i-p heterojunction solar cells incorporating a doped, hole conducting polyaniline (PANI) layer. The cells were prepared by spin-casting differing polyaniline dispersions corresponding to film conductivities ranging from 10-2 to 102 S/m. The open-circuit voltages VOC of the cells ranged from 0.5-0.7 V. While these open-circuit voltages are lower than for the best a-Si:H cells utilizing nanocrystalline Si or a-SiC:H p-layers, they illustrate well how open-circuit voltages are limited by the work function of the contacting material. They also give insight into the mechanism limiting VOC for crystal silicon/PANI n/p solar cells, for which VOC varies little for PANI conductivities greater than 10-1 S/cm. The comparison excludes electrophoresis effects in the PANI as the limiting mechanism.

AB - We fabricated hydrogenated amorphous silicon/polyaniline n-i-p heterojunction solar cells incorporating a doped, hole conducting polyaniline (PANI) layer. The cells were prepared by spin-casting differing polyaniline dispersions corresponding to film conductivities ranging from 10-2 to 102 S/m. The open-circuit voltages VOC of the cells ranged from 0.5-0.7 V. While these open-circuit voltages are lower than for the best a-Si:H cells utilizing nanocrystalline Si or a-SiC:H p-layers, they illustrate well how open-circuit voltages are limited by the work function of the contacting material. They also give insight into the mechanism limiting VOC for crystal silicon/PANI n/p solar cells, for which VOC varies little for PANI conductivities greater than 10-1 S/cm. The comparison excludes electrophoresis effects in the PANI as the limiting mechanism.

KW - Solar cells

UR - http://www.scopus.com/inward/record.url?scp=42649146193&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42649146193&partnerID=8YFLogxK

U2 - 10.1016/j.jnoncrysol.2007.10.104

DO - 10.1016/j.jnoncrysol.2007.10.104

M3 - Article

AN - SCOPUS:42649146193

VL - 354

SP - 2862

EP - 2865

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

IS - 19-25

ER -