TY - GEN
T1 - ACE
T2 - 53rd Annual IEEE/IFIP International Conference on Dependable Systems and Networks - Supplemental Volume, DSN-S 2023
AU - Lee, Jeoungwon
AU - Park, Heekwon
AU - Choi, Gunhee
AU - Kim, Bryan S.
AU - Yoo, Seehwan
AU - Lee, Jaedong
AU - Choi, Jongmoo
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - Reliability is one of the primary concerns in modern SSD designs. Despite the benefits of high performance, low power consumption, and increased density, the vendors struggle with the reliability of user data due to various sources of analog noise. There were consorted efforts and studies to improve the reliability issues in SSDs, but we still need experimenting tools that present analog states of errors. To address this issue, we propose a novel NAND flash memory emulator, called ACE (Analog Cell Emulator), that uses threshold voltages for dependability studies. The proposed emulator maintains data as analog values through threshold voltage modeling, enabling emulation of endurance, retention, and disturbance errors of flash memory. To reduce the emulation overhead, metadata in a cell, page, and block are managed separately, and emulation is performed while reading rather than periodic error emulation. We evaluate the accuracy of ACE by comparing its signal with that of actual devices, with the results indicating that the signal differences are up to 4.3%. Additionally, we analyze two reliability enhancement techniques, ECC (Error Correction Code) and read-retry, using ACE with adjusted reference voltages. This analysis, which could not be feasible with existing emulators, demonstrates the advantages of the proposed analog emulator.
AB - Reliability is one of the primary concerns in modern SSD designs. Despite the benefits of high performance, low power consumption, and increased density, the vendors struggle with the reliability of user data due to various sources of analog noise. There were consorted efforts and studies to improve the reliability issues in SSDs, but we still need experimenting tools that present analog states of errors. To address this issue, we propose a novel NAND flash memory emulator, called ACE (Analog Cell Emulator), that uses threshold voltages for dependability studies. The proposed emulator maintains data as analog values through threshold voltage modeling, enabling emulation of endurance, retention, and disturbance errors of flash memory. To reduce the emulation overhead, metadata in a cell, page, and block are managed separately, and emulation is performed while reading rather than periodic error emulation. We evaluate the accuracy of ACE by comparing its signal with that of actual devices, with the results indicating that the signal differences are up to 4.3%. Additionally, we analyze two reliability enhancement techniques, ECC (Error Correction Code) and read-retry, using ACE with adjusted reference voltages. This analysis, which could not be feasible with existing emulators, demonstrates the advantages of the proposed analog emulator.
KW - Analog cell emulator
KW - Flash memory
KW - Noise modeling
KW - Reliability enhancement techniques
UR - http://www.scopus.com/inward/record.url?scp=85169298494&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85169298494&partnerID=8YFLogxK
U2 - 10.1109/DSN-S58398.2023.00021
DO - 10.1109/DSN-S58398.2023.00021
M3 - Conference contribution
AN - SCOPUS:85169298494
T3 - Proceedings - 53rd Annual IEEE/IFIP International Conference on Dependable Systems and Networks - Supplemental Volume, DSN-S 2023
SP - 28
EP - 34
BT - Proceedings - 53rd Annual IEEE/IFIP International Conference on Dependable Systems and Networks - Supplemental Volume, DSN-S 2023
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 27 June 2023 through 30 June 2023
ER -