A study of the radiation tolerance of poly-crystalline and single-crystalline CVD diamond to 800 MeV and 24 GeV protons

RD42 Collaboration

Research output: Contribution to journalArticle

Abstract

We have measured the radiation tolerance of poly-crystalline and single-crystalline diamonds grown by the chemical vapor deposition (CVD) process by measuring the charge collected before and after irradiation in a 50 μm pitch strip detector fabricated on each diamond sample. We irradiated one group of sensors with 800 MeV protons, and a second group of sensors with 24 GeV protons, in steps, to (1.34 ± 0.08 × 1016) protons cm-2 and (1.80 ± 0.18 × 1016) protons cm-2 respectively. We observe the sum of mean drift paths for electrons and holes for both poly-crystalline CVD diamond and single-crystalline CVD diamond decreases with irradiation fluence from its initial value according to a simple damage curve characterized by a damage constant for each irradiation energy and the irradiation fluence. We find for each irradiation energy the damage constant, for poly-crystalline CVD diamond to be the same within statistical errors as the damage constant for single-crystalline CVD diamond. We find the damage constant for diamond irradiated with 24 GeV protons to be 0.62+0.01 -0.01 (stat)+0.06 -0.06 (syst) × 10-18 cm2(p μm)-1 and the damage constant for diamond irradiated with 800 MeV protons to be 1.04+0.02 -0.02 (stat)+0.04 -0.05 (syst) × 10-18 cm2 (p μm)-1. Moreover, we observe the FWHM/MP pulse height decreases with fluence for poly-crystalline CVD material and within statistical errors does not change with fluence for single-crystalline CVD material for both 24 GeV proton irradiation and 800 MeV proton irradiation. Finally, we have measured the uniformity of each sample as a function of fluence and observed that for poly-crystalline CVD diamond the samples become more uniform with fluence while for single-crystalline CVD diamond the uniformity does not change with fluence.

Original languageEnglish (US)
Article number465103
JournalJournal of Physics D: Applied Physics
Volume52
Issue number46
DOIs
StatePublished - Aug 30 2019

Fingerprint

Diamond
radiation tolerance
Protons
Chemical vapor deposition
Diamonds
diamonds
vapor deposition
Crystalline materials
Radiation
protons
fluence
damage
Irradiation
irradiation
Proton irradiation
proton irradiation
sensors
Sensors
pulse amplitude
Full width at half maximum

Keywords

  • charge collection distance
  • chemical vapor deposition
  • mean drift path
  • polycrystalline diamond
  • radiation damage constant
  • radiation tolerance
  • single crystal diamond

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

A study of the radiation tolerance of poly-crystalline and single-crystalline CVD diamond to 800 MeV and 24 GeV protons. / RD42 Collaboration.

In: Journal of Physics D: Applied Physics, Vol. 52, No. 46, 465103, 30.08.2019.

Research output: Contribution to journalArticle

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title = "A study of the radiation tolerance of poly-crystalline and single-crystalline CVD diamond to 800 MeV and 24 GeV protons",
abstract = "We have measured the radiation tolerance of poly-crystalline and single-crystalline diamonds grown by the chemical vapor deposition (CVD) process by measuring the charge collected before and after irradiation in a 50 μm pitch strip detector fabricated on each diamond sample. We irradiated one group of sensors with 800 MeV protons, and a second group of sensors with 24 GeV protons, in steps, to (1.34 ± 0.08 × 1016) protons cm-2 and (1.80 ± 0.18 × 1016) protons cm-2 respectively. We observe the sum of mean drift paths for electrons and holes for both poly-crystalline CVD diamond and single-crystalline CVD diamond decreases with irradiation fluence from its initial value according to a simple damage curve characterized by a damage constant for each irradiation energy and the irradiation fluence. We find for each irradiation energy the damage constant, for poly-crystalline CVD diamond to be the same within statistical errors as the damage constant for single-crystalline CVD diamond. We find the damage constant for diamond irradiated with 24 GeV protons to be 0.62+0.01 -0.01 (stat)+0.06 -0.06 (syst) × 10-18 cm2(p μm)-1 and the damage constant for diamond irradiated with 800 MeV protons to be 1.04+0.02 -0.02 (stat)+0.04 -0.05 (syst) × 10-18 cm2 (p μm)-1. Moreover, we observe the FWHM/MP pulse height decreases with fluence for poly-crystalline CVD material and within statistical errors does not change with fluence for single-crystalline CVD material for both 24 GeV proton irradiation and 800 MeV proton irradiation. Finally, we have measured the uniformity of each sample as a function of fluence and observed that for poly-crystalline CVD diamond the samples become more uniform with fluence while for single-crystalline CVD diamond the uniformity does not change with fluence.",
keywords = "charge collection distance, chemical vapor deposition, mean drift path, polycrystalline diamond, radiation damage constant, radiation tolerance, single crystal diamond",
author = "{RD42 Collaboration} and L. B{\"a}ni and A. Alexopoulos and M. Artuso and F. Bachmair and M. Bartosik and H. Beck and V. Bellini and V. Belyaev and B. Bentele and A. Bes and Brom, {J. M.} and M. Bruzzi and G. Chiodini and D. Chren and V. Cindro and G. Claus and J. Collot and J. Cumalat and A. Dabrowski and R. D'Alessandro and D. Dauvergne and {De Boer}, W. and S. Dick and C. Dorfer and M. D{\"u}nser and V. Eremin and G. Forcolin and J. Forneris and L. Gallin-Martel and Gallin-Martel, {M. L.} and Gan, {K. K.} and M. Gastal and C. Giroletti and M. Goffe and J. Goldstein and A. Golubev and A. Gorišek and E. Grigoriev and J. Grosse-Knetter and A. Grummer and B. Gui and M. Guthoff and B. Hiti and D. Hits and M. Hoeferkamp and T. Hofmann and J. Hosselet and Hostachy, {J. Y.} and F. H{\"u}gging and C. Hutton",
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T1 - A study of the radiation tolerance of poly-crystalline and single-crystalline CVD diamond to 800 MeV and 24 GeV protons

AU - RD42 Collaboration

AU - Bäni, L.

AU - Alexopoulos, A.

AU - Artuso, M.

AU - Bachmair, F.

AU - Bartosik, M.

AU - Beck, H.

AU - Bellini, V.

AU - Belyaev, V.

AU - Bentele, B.

AU - Bes, A.

AU - Brom, J. M.

AU - Bruzzi, M.

AU - Chiodini, G.

AU - Chren, D.

AU - Cindro, V.

AU - Claus, G.

AU - Collot, J.

AU - Cumalat, J.

AU - Dabrowski, A.

AU - D'Alessandro, R.

AU - Dauvergne, D.

AU - De Boer, W.

AU - Dick, S.

AU - Dorfer, C.

AU - Dünser, M.

AU - Eremin, V.

AU - Forcolin, G.

AU - Forneris, J.

AU - Gallin-Martel, L.

AU - Gallin-Martel, M. L.

AU - Gan, K. K.

AU - Gastal, M.

AU - Giroletti, C.

AU - Goffe, M.

AU - Goldstein, J.

AU - Golubev, A.

AU - Gorišek, A.

AU - Grigoriev, E.

AU - Grosse-Knetter, J.

AU - Grummer, A.

AU - Gui, B.

AU - Guthoff, M.

AU - Hiti, B.

AU - Hits, D.

AU - Hoeferkamp, M.

AU - Hofmann, T.

AU - Hosselet, J.

AU - Hostachy, J. Y.

AU - Hügging, F.

AU - Hutton, C.

PY - 2019/8/30

Y1 - 2019/8/30

N2 - We have measured the radiation tolerance of poly-crystalline and single-crystalline diamonds grown by the chemical vapor deposition (CVD) process by measuring the charge collected before and after irradiation in a 50 μm pitch strip detector fabricated on each diamond sample. We irradiated one group of sensors with 800 MeV protons, and a second group of sensors with 24 GeV protons, in steps, to (1.34 ± 0.08 × 1016) protons cm-2 and (1.80 ± 0.18 × 1016) protons cm-2 respectively. We observe the sum of mean drift paths for electrons and holes for both poly-crystalline CVD diamond and single-crystalline CVD diamond decreases with irradiation fluence from its initial value according to a simple damage curve characterized by a damage constant for each irradiation energy and the irradiation fluence. We find for each irradiation energy the damage constant, for poly-crystalline CVD diamond to be the same within statistical errors as the damage constant for single-crystalline CVD diamond. We find the damage constant for diamond irradiated with 24 GeV protons to be 0.62+0.01 -0.01 (stat)+0.06 -0.06 (syst) × 10-18 cm2(p μm)-1 and the damage constant for diamond irradiated with 800 MeV protons to be 1.04+0.02 -0.02 (stat)+0.04 -0.05 (syst) × 10-18 cm2 (p μm)-1. Moreover, we observe the FWHM/MP pulse height decreases with fluence for poly-crystalline CVD material and within statistical errors does not change with fluence for single-crystalline CVD material for both 24 GeV proton irradiation and 800 MeV proton irradiation. Finally, we have measured the uniformity of each sample as a function of fluence and observed that for poly-crystalline CVD diamond the samples become more uniform with fluence while for single-crystalline CVD diamond the uniformity does not change with fluence.

AB - We have measured the radiation tolerance of poly-crystalline and single-crystalline diamonds grown by the chemical vapor deposition (CVD) process by measuring the charge collected before and after irradiation in a 50 μm pitch strip detector fabricated on each diamond sample. We irradiated one group of sensors with 800 MeV protons, and a second group of sensors with 24 GeV protons, in steps, to (1.34 ± 0.08 × 1016) protons cm-2 and (1.80 ± 0.18 × 1016) protons cm-2 respectively. We observe the sum of mean drift paths for electrons and holes for both poly-crystalline CVD diamond and single-crystalline CVD diamond decreases with irradiation fluence from its initial value according to a simple damage curve characterized by a damage constant for each irradiation energy and the irradiation fluence. We find for each irradiation energy the damage constant, for poly-crystalline CVD diamond to be the same within statistical errors as the damage constant for single-crystalline CVD diamond. We find the damage constant for diamond irradiated with 24 GeV protons to be 0.62+0.01 -0.01 (stat)+0.06 -0.06 (syst) × 10-18 cm2(p μm)-1 and the damage constant for diamond irradiated with 800 MeV protons to be 1.04+0.02 -0.02 (stat)+0.04 -0.05 (syst) × 10-18 cm2 (p μm)-1. Moreover, we observe the FWHM/MP pulse height decreases with fluence for poly-crystalline CVD material and within statistical errors does not change with fluence for single-crystalline CVD material for both 24 GeV proton irradiation and 800 MeV proton irradiation. Finally, we have measured the uniformity of each sample as a function of fluence and observed that for poly-crystalline CVD diamond the samples become more uniform with fluence while for single-crystalline CVD diamond the uniformity does not change with fluence.

KW - charge collection distance

KW - chemical vapor deposition

KW - mean drift path

KW - polycrystalline diamond

KW - radiation damage constant

KW - radiation tolerance

KW - single crystal diamond

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