A nonlinear interface optical switch structure for dual mode switching revisited

Rebecca J. Bussjager, Joseph M. Osman, Joseph Chaiken

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

There is a need for devices which will allow integration of photonic/optical computing subsystems into electronic computing architectures. This presentation reviews the nonlinear interface optical switch (NIOS) concept and then describes a new effect, the erasable optical memory (EOM) effect. We evaluate an extension of the NIOS device to allow simultaneous optical/electronic, i.e. dual mode, switching of light utilizing the EOM effect. Specific devices involve the fabrication of thin film tungsten (VI) oxide (WO3) and tungsten (V) oxide (W2O5) on the hypotenuse of glass (BK-7), fused silica (SiO2) and zinc selenide (ZnSe) right angle prisms. Chemical reactions and temporal response tests were performed and are discussed.

Original languageEnglish (US)
Pages (from-to)137-147
Number of pages11
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3384
DOIs
StatePublished - Dec 1 1998
EventPhotonic Processing Technology and Applications II - Orlando, FL, United States
Duration: Apr 14 1998Apr 14 1998

Keywords

  • Erasable optical memory
  • NIOS switch
  • Photonic switch
  • Tungsten oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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