A nonlinear interface optical switch structure for dual mode switching revisited

Rebecca J. Bussjager; Joseph M. Osman; Joseph Chaiken

doi:10.1117/12.317654

A nonlinear interface optical switch structure for dual mode switching revisited

Rebecca J. Bussjager, Joseph M. Osman, Joseph Chaiken

Department of Chemistry

Research output: Contribution to journal › Conference Article › peer-review

1 Scopus citations

Abstract

There is a need for devices which will allow integration of photonic/optical computing subsystems into electronic computing architectures. This presentation reviews the nonlinear interface optical switch (NIOS) concept and then describes a new effect, the erasable optical memory (EOM) effect. We evaluate an extension of the NIOS device to allow simultaneous optical/electronic, i.e. dual mode, switching of light utilizing the EOM effect. Specific devices involve the fabrication of thin film tungsten (VI) oxide (WO₃) and tungsten (V) oxide (W₂O₅) on the hypotenuse of glass (BK-7), fused silica (SiO₂) and zinc selenide (ZnSe) right angle prisms. Chemical reactions and temporal response tests were performed and are discussed.

Original language	English (US)
Pages (from-to)	137-147
Number of pages	11
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3384
DOIs	https://doi.org/10.1117/12.317654
State	Published - 1998
Event	Photonic Processing Technology and Applications II - Orlando, FL, United States Duration: Apr 14 1998 → Apr 14 1998

Keywords

Erasable optical memory
NIOS switch
Photonic switch
Tungsten oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.317654

Cite this

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title = "A nonlinear interface optical switch structure for dual mode switching revisited",

abstract = "There is a need for devices which will allow integration of photonic/optical computing subsystems into electronic computing architectures. This presentation reviews the nonlinear interface optical switch (NIOS) concept and then describes a new effect, the erasable optical memory (EOM) effect. We evaluate an extension of the NIOS device to allow simultaneous optical/electronic, i.e. dual mode, switching of light utilizing the EOM effect. Specific devices involve the fabrication of thin film tungsten (VI) oxide (WO3) and tungsten (V) oxide (W2O5) on the hypotenuse of glass (BK-7), fused silica (SiO2) and zinc selenide (ZnSe) right angle prisms. Chemical reactions and temporal response tests were performed and are discussed.",

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note = "Photonic Processing Technology and Applications II ; Conference date: 14-04-1998 Through 14-04-1998",

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T1 - A nonlinear interface optical switch structure for dual mode switching revisited

AU - Bussjager, Rebecca J.

AU - Osman, Joseph M.

AU - Chaiken, Joseph

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AB - There is a need for devices which will allow integration of photonic/optical computing subsystems into electronic computing architectures. This presentation reviews the nonlinear interface optical switch (NIOS) concept and then describes a new effect, the erasable optical memory (EOM) effect. We evaluate an extension of the NIOS device to allow simultaneous optical/electronic, i.e. dual mode, switching of light utilizing the EOM effect. Specific devices involve the fabrication of thin film tungsten (VI) oxide (WO3) and tungsten (V) oxide (W2O5) on the hypotenuse of glass (BK-7), fused silica (SiO2) and zinc selenide (ZnSe) right angle prisms. Chemical reactions and temporal response tests were performed and are discussed.

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A nonlinear interface optical switch structure for dual mode switching revisited

Abstract

Keywords

ASJC Scopus subject areas

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