The transient response of an illuminated (‘optically biased’) semiconductor to a small photoexcitation impulse is calculated by linearizing the multiple-trapping model. Both the photocurrent and photo-induced absorption responses are treated, including the effects of finite trap occupancy and of monomolecular or bimolecular recombination processes. Specific solutions are presented for exponentially distributed traps, and a simple classification of these transient responses based on a thermalization criterion is advanced. The numerical and analytical solution procedures used are, in principle, exact and may be used to calculate the transient response for arbitrary trap distributions. These solutions are compared with the approximate solutions obtained using the time-dependent demarcation-energy technique. Procedures for using the results to obtain the model parameters from experimental transient-response measurements are given.
|Original language||English (US)|
|Number of pages||21|
|Journal||Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties|
|State||Published - Dec 1985|
ASJC Scopus subject areas
- Chemical Engineering(all)
- Physics and Astronomy(all)