TY - JOUR
T1 - A multiple-trapping model with optical bias
AU - Pandya, R.
AU - Schiff, E. A.
N1 - Funding Information:
t This rksearch was supported by The National Science Foundation through grant DMR 83-06083. # Present address: Philips Research Laboratories, Briarcliff Manor, New York 10510, U.S.A.
Copyright:
Copyright 2016 Elsevier B.V., All rights reserved.
PY - 1985/12
Y1 - 1985/12
N2 - The transient response of an illuminated (‘optically biased’) semiconductor to a small photoexcitation impulse is calculated by linearizing the multiple-trapping model. Both the photocurrent and photo-induced absorption responses are treated, including the effects of finite trap occupancy and of monomolecular or bimolecular recombination processes. Specific solutions are presented for exponentially distributed traps, and a simple classification of these transient responses based on a thermalization criterion is advanced. The numerical and analytical solution procedures used are, in principle, exact and may be used to calculate the transient response for arbitrary trap distributions. These solutions are compared with the approximate solutions obtained using the time-dependent demarcation-energy technique. Procedures for using the results to obtain the model parameters from experimental transient-response measurements are given.
AB - The transient response of an illuminated (‘optically biased’) semiconductor to a small photoexcitation impulse is calculated by linearizing the multiple-trapping model. Both the photocurrent and photo-induced absorption responses are treated, including the effects of finite trap occupancy and of monomolecular or bimolecular recombination processes. Specific solutions are presented for exponentially distributed traps, and a simple classification of these transient responses based on a thermalization criterion is advanced. The numerical and analytical solution procedures used are, in principle, exact and may be used to calculate the transient response for arbitrary trap distributions. These solutions are compared with the approximate solutions obtained using the time-dependent demarcation-energy technique. Procedures for using the results to obtain the model parameters from experimental transient-response measurements are given.
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U2 - 10.1080/13642818508238952
DO - 10.1080/13642818508238952
M3 - Article
AN - SCOPUS:0022244380
VL - 52
SP - 1075
EP - 1095
JO - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
JF - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
SN - 1364-2812
IS - 6
ER -