A doping-precipitated morphology in plasma-deposited a-Si:H

E. A. Schiff; P. D. Persans; H. Fritzsche; V. Akopyan

doi:10.1063/1.92267

A doping-precipitated morphology in plasma-deposited a-Si:H

E. A. Schiff, P. D. Persans, H. Fritzsche, V. Akopyan

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45 Scopus citations

Abstract

A grossly inhomogeneous, noncolumnar morphology has been observed in doped, plasma-deposited hydrogenated amorphous silicon (a-Si:H) within critical ranges of the diborane to silane ratio in the gas phase. The diborane level can be as low as 5 ppm and depends both on the electrode self-bias potential and the growth rate. Undoped specimens prepared under the same deposition conditions have properties typical of device-grade a-Si:H. These morphology observations suggest a structural origin for some doping-dependent properties in a-Si:H.

Original language	English (US)
Pages (from-to)	92-94
Number of pages	3
Journal	Applied Physics Letters
Volume	38
Issue number	2
DOIs	https://doi.org/10.1063/1.92267
State	Published - 1981
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.92267

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@article{4dd46685f877461b98ce32baa7911170,

title = "A doping-precipitated morphology in plasma-deposited a-Si:H",

abstract = "A grossly inhomogeneous, noncolumnar morphology has been observed in doped, plasma-deposited hydrogenated amorphous silicon (a-Si:H) within critical ranges of the diborane to silane ratio in the gas phase. The diborane level can be as low as 5 ppm and depends both on the electrode self-bias potential and the growth rate. Undoped specimens prepared under the same deposition conditions have properties typical of device-grade a-Si:H. These morphology observations suggest a structural origin for some doping-dependent properties in a-Si:H.",

author = "Schiff, {E. A.} and Persans, {P. D.} and H. Fritzsche and V. Akopyan",

year = "1981",

doi = "10.1063/1.92267",

language = "English (US)",

volume = "38",

pages = "92--94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - A doping-precipitated morphology in plasma-deposited a-Si:H

AU - Schiff, E. A.

AU - Persans, P. D.

AU - Fritzsche, H.

AU - Akopyan, V.

PY - 1981

Y1 - 1981

N2 - A grossly inhomogeneous, noncolumnar morphology has been observed in doped, plasma-deposited hydrogenated amorphous silicon (a-Si:H) within critical ranges of the diborane to silane ratio in the gas phase. The diborane level can be as low as 5 ppm and depends both on the electrode self-bias potential and the growth rate. Undoped specimens prepared under the same deposition conditions have properties typical of device-grade a-Si:H. These morphology observations suggest a structural origin for some doping-dependent properties in a-Si:H.

AB - A grossly inhomogeneous, noncolumnar morphology has been observed in doped, plasma-deposited hydrogenated amorphous silicon (a-Si:H) within critical ranges of the diborane to silane ratio in the gas phase. The diborane level can be as low as 5 ppm and depends both on the electrode self-bias potential and the growth rate. Undoped specimens prepared under the same deposition conditions have properties typical of device-grade a-Si:H. These morphology observations suggest a structural origin for some doping-dependent properties in a-Si:H.

UR - http://www.scopus.com/inward/record.url?scp=0042661798&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042661798&partnerID=8YFLogxK

U2 - 10.1063/1.92267

DO - 10.1063/1.92267

M3 - Article

AN - SCOPUS:0042661798

SN - 0003-6951

VL - 38

SP - 92

EP - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

A doping-precipitated morphology in plasma-deposited a-Si:H

Abstract

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