A grossly inhomogeneous, noncolumnar morphology has been observed in doped, plasma-deposited hydrogenated amorphous silicon (a-Si:H) within critical ranges of the diborane to silane ratio in the gas phase. The diborane level can be as low as 5 ppm and depends both on the electrode self-bias potential and the growth rate. Undoped specimens prepared under the same deposition conditions have properties typical of device-grade a-Si:H. These morphology observations suggest a structural origin for some doping-dependent properties in a-Si:H.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)