A doping-precipitated morphology in plasma-deposited a-Si:H

E. A. Schiff, P. D. Persans, H. Fritzsche, V. Akopyan

Research output: Contribution to journalArticle

44 Scopus citations

Abstract

A grossly inhomogeneous, noncolumnar morphology has been observed in doped, plasma-deposited hydrogenated amorphous silicon (a-Si:H) within critical ranges of the diborane to silane ratio in the gas phase. The diborane level can be as low as 5 ppm and depends both on the electrode self-bias potential and the growth rate. Undoped specimens prepared under the same deposition conditions have properties typical of device-grade a-Si:H. These morphology observations suggest a structural origin for some doping-dependent properties in a-Si:H.

Original languageEnglish (US)
Pages (from-to)92-94
Number of pages3
JournalApplied Physics Letters
Volume38
Issue number2
DOIs
StatePublished - Dec 1 1981
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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