A cross-layer design framework and comparative analysis of SRAM cells and cache memories using 7nm FinFET devices

Alireza Shafaei, Shuang Chen, Yanzhi Wang, Massoud Pedram

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publication2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479974382
DOIs
StatePublished - Jan 30 2014
Externally publishedYes
Event2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014 - Millbrae, United States
Duration: Oct 6 2014Oct 9 2014

Other

Other2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014
CountryUnited States
CityMillbrae
Period10/6/1410/9/14

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Shafaei, A., Chen, S., Wang, Y., & Pedram, M. (2014). A cross-layer design framework and comparative analysis of SRAM cells and cache memories using 7nm FinFET devices. In 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014 [7028219] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/S3S.2014.7028219