A comparison of fluorine tin oxide and indium tin oxide as the transparent electrode for P3OT/TiO2 solar cells

Qiquan Qiao; James Beck; Ryan Lumpkin; Jake Pretko; James T. Mcleskey

doi:10.1016/j.solmat.2005.05.020

A comparison of fluorine tin oxide and indium tin oxide as the transparent electrode for P3OT/TiO₂ solar cells

Qiquan Qiao, James Beck, Ryan Lumpkin, Jake Pretko, James T. Mcleskey

Research output: Contribution to journal › Article › peer-review

57 Scopus citations

Abstract

Open circuit voltage (V_oc) and other photovoltaic parameters from fluorine tin oxide (FTO) P3OT/TiO₂ composite solar cells have been investigated in comparison with those from the indium tin oxide (ITO) devices with the same device structure and fabrication process. From the experimental results, the performance of FTO-based devices is better than that of ITO devices in terms of V_oc, short circuit current density (J _sc), and power conversion efficiency. The origin of V_oc and the higher V_oc of FTO can be explained and estimated by metal-insulator-metal model with a non-ohmic cathode contact.

Original language	English (US)
Pages (from-to)	1034-1040
Number of pages	7
Journal	Solar Energy Materials and Solar Cells
Volume	90
Issue number	7-8
DOIs	https://doi.org/10.1016/j.solmat.2005.05.020
State	Published - May 5 2006
Externally published	Yes

Keywords

FTO
ITO
Open circuit voltage
TiO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

Access to Document

10.1016/j.solmat.2005.05.020

Cite this

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title = "A comparison of fluorine tin oxide and indium tin oxide as the transparent electrode for P3OT/TiO2 solar cells",

abstract = "Open circuit voltage (Voc) and other photovoltaic parameters from fluorine tin oxide (FTO) P3OT/TiO2 composite solar cells have been investigated in comparison with those from the indium tin oxide (ITO) devices with the same device structure and fabrication process. From the experimental results, the performance of FTO-based devices is better than that of ITO devices in terms of Voc, short circuit current density (J sc), and power conversion efficiency. The origin of Voc and the higher Voc of FTO can be explained and estimated by metal-insulator-metal model with a non-ohmic cathode contact.",

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AU - Qiao, Qiquan

AU - Beck, James

AU - Lumpkin, Ryan

AU - Pretko, Jake

AU - Mcleskey, James T.

PY - 2006/5/5

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AB - Open circuit voltage (Voc) and other photovoltaic parameters from fluorine tin oxide (FTO) P3OT/TiO2 composite solar cells have been investigated in comparison with those from the indium tin oxide (ITO) devices with the same device structure and fabrication process. From the experimental results, the performance of FTO-based devices is better than that of ITO devices in terms of Voc, short circuit current density (J sc), and power conversion efficiency. The origin of Voc and the higher Voc of FTO can be explained and estimated by metal-insulator-metal model with a non-ohmic cathode contact.

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