5nm FinFET standard cell library optimization and circuit synthesis in near-and super-threshold voltage regimes

Qing Xie; Xue Lin; Yanzhi Wang; Mohammad Javad Dousti; Alireza Shafaei; Majid Ghasemi-Gol; Massoud Pedram

doi:10.1109/ISVLSI.2014.101

5nm FinFET standard cell library optimization and circuit synthesis in near-and super-threshold voltage regimes

Qing Xie, Xue Lin, Yanzhi Wang, Mohammad Javad Dousti, Alireza Shafaei, Majid Ghasemi-Gol, Massoud Pedram

Research output: Chapter in Book/Entry/Poem › Conference contribution

30 Scopus citations

Abstract

FinFET device has been proposed as a promising substitute for the traditional bulk CMOS-based device at the nanoscale, due to its extraordinary properties such as improved channel controllability, high ON/OFF current ratio, reduced short-channel effects, and relative immunity to gate line-edge roughness. In addition, the near-ideal subthreshold behavior indicates the potential application of FinFET circuits in the near-threshold supply voltage regime, which consumes an order of magnitude less energy than the regular strong-inversion circuits operating in the super-threshold supply voltage regime. This paper presents a design flow of creating standard cells by using the FinFET 5nm technology node, including both near-threshold and super-threshold operations, and building a Liberty-format standard cell library. The circuit synthesis results of various combinational and sequential circuits based on the 5nm FinFET standard cell library show up to 40X circuit speed improvement and three orders of magnitude energy reduction compared to those of 45nm bulk CMOS technology.

Original language	English (US)
Title of host publication	Proceedings of IEEE Computer Society Annual Symposium on VLSI, ISVLSI
Publisher	IEEE Computer Society
Pages	424-429
Number of pages	6
ISBN (Electronic)	9781479937639
DOIs	https://doi.org/10.1109/ISVLSI.2014.101
State	Published - Sep 18 2014
Externally published	Yes
Event	2014 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2014 - Tampa, United States Duration: Jul 9 2014 → Jul 11 2014

Other

Other	2014 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2014
Country/Territory	United States
City	Tampa
Period	7/9/14 → 7/11/14

Keywords

5nm technology
FinFET
near-threshold computing
performance
power consumption
standard cell library

ASJC Scopus subject areas

Hardware and Architecture
Control and Systems Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/ISVLSI.2014.101

Cite this

Xie, Q., Lin, X., Wang, Y., Dousti, M. J., Shafaei, A., Ghasemi-Gol, M., & Pedram, M. (2014). 5nm FinFET standard cell library optimization and circuit synthesis in near-and super-threshold voltage regimes. In Proceedings of IEEE Computer Society Annual Symposium on VLSI, ISVLSI (pp. 424-429). Article 6903401 IEEE Computer Society. https://doi.org/10.1109/ISVLSI.2014.101

Xie, Q, Lin, X, Wang, Y, Dousti, MJ, Shafaei, A, Ghasemi-Gol, M & Pedram, M 2014, 5nm FinFET standard cell library optimization and circuit synthesis in near-and super-threshold voltage regimes. in Proceedings of IEEE Computer Society Annual Symposium on VLSI, ISVLSI., 6903401, IEEE Computer Society, pp. 424-429, 2014 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2014, Tampa, United States, 7/9/14. https://doi.org/10.1109/ISVLSI.2014.101

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title = "5nm FinFET standard cell library optimization and circuit synthesis in near-and super-threshold voltage regimes",

abstract = "FinFET device has been proposed as a promising substitute for the traditional bulk CMOS-based device at the nanoscale, due to its extraordinary properties such as improved channel controllability, high ON/OFF current ratio, reduced short-channel effects, and relative immunity to gate line-edge roughness. In addition, the near-ideal subthreshold behavior indicates the potential application of FinFET circuits in the near-threshold supply voltage regime, which consumes an order of magnitude less energy than the regular strong-inversion circuits operating in the super-threshold supply voltage regime. This paper presents a design flow of creating standard cells by using the FinFET 5nm technology node, including both near-threshold and super-threshold operations, and building a Liberty-format standard cell library. The circuit synthesis results of various combinational and sequential circuits based on the 5nm FinFET standard cell library show up to 40X circuit speed improvement and three orders of magnitude energy reduction compared to those of 45nm bulk CMOS technology.",

keywords = "5nm technology, FinFET, near-threshold computing, performance, power consumption, standard cell library",

author = "Qing Xie and Xue Lin and Yanzhi Wang and Dousti, {Mohammad Javad} and Alireza Shafaei and Majid Ghasemi-Gol and Massoud Pedram",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2014 ; Conference date: 09-07-2014 Through 11-07-2014",

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doi = "10.1109/ISVLSI.2014.101",

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AU - Lin, Xue

AU - Wang, Yanzhi

AU - Dousti, Mohammad Javad

AU - Shafaei, Alireza

AU - Ghasemi-Gol, Majid

AU - Pedram, Massoud

PY - 2014/9/18

Y1 - 2014/9/18

N2 - FinFET device has been proposed as a promising substitute for the traditional bulk CMOS-based device at the nanoscale, due to its extraordinary properties such as improved channel controllability, high ON/OFF current ratio, reduced short-channel effects, and relative immunity to gate line-edge roughness. In addition, the near-ideal subthreshold behavior indicates the potential application of FinFET circuits in the near-threshold supply voltage regime, which consumes an order of magnitude less energy than the regular strong-inversion circuits operating in the super-threshold supply voltage regime. This paper presents a design flow of creating standard cells by using the FinFET 5nm technology node, including both near-threshold and super-threshold operations, and building a Liberty-format standard cell library. The circuit synthesis results of various combinational and sequential circuits based on the 5nm FinFET standard cell library show up to 40X circuit speed improvement and three orders of magnitude energy reduction compared to those of 45nm bulk CMOS technology.

AB - FinFET device has been proposed as a promising substitute for the traditional bulk CMOS-based device at the nanoscale, due to its extraordinary properties such as improved channel controllability, high ON/OFF current ratio, reduced short-channel effects, and relative immunity to gate line-edge roughness. In addition, the near-ideal subthreshold behavior indicates the potential application of FinFET circuits in the near-threshold supply voltage regime, which consumes an order of magnitude less energy than the regular strong-inversion circuits operating in the super-threshold supply voltage regime. This paper presents a design flow of creating standard cells by using the FinFET 5nm technology node, including both near-threshold and super-threshold operations, and building a Liberty-format standard cell library. The circuit synthesis results of various combinational and sequential circuits based on the 5nm FinFET standard cell library show up to 40X circuit speed improvement and three orders of magnitude energy reduction compared to those of 45nm bulk CMOS technology.

KW - 5nm technology

KW - FinFET

KW - near-threshold computing

KW - performance

KW - power consumption

KW - standard cell library

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5nm FinFET standard cell library optimization and circuit synthesis in near-and super-threshold voltage regimes

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Keywords

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