10nm Gate-length junctionless gate-all-around (JL-GAA) FETs based 8T SRAM design under process variation using a cross-layer simulation

Luhao Wang, Alireza Shafaei, Shuang Chen, Yanzhi Wang, Shahin Nazarian, Massoud Pedram

Research output: Chapter in Book/Entry/PoemConference contribution

4 Scopus citations

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Engineering

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Computer Science