10nm Gate-length junctionless gate-all-around (JL-GAA) FETs based 8T SRAM design under process variation using a cross-layer simulation

Luhao Wang, Alireza Shafaei, Shuang Chen, Yanzhi Wang, Shahin Nazarian, Massoud Pedram

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Gate-all-around (GAA) FETs is proposed as a choice for deeply scaled MOSFETs beyond the 10 nm technology node. In this paper, we present a device and circuit (8T SRAM) co-simulation work based on Junctionless-GAA (JL-GAA) FETs. The same doping concentration level in channel and source/drain can mitigate fabrication complexity and process variability. The 8T SRAM monte carlo simulation results considering process variations shows JL-GAA FETs can reliably operate at low supply voltage.

Original languageEnglish (US)
Title of host publication2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509002597
DOIs
StatePublished - Nov 20 2015
Externally publishedYes
EventIEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015 - Rohnert Park, United States
Duration: Oct 5 2015Oct 8 2015

Other

OtherIEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015
CountryUnited States
CityRohnert Park
Period10/5/1510/8/15

Keywords

  • cross layer simulation
  • gate-all-around (GAA)
  • junctionless
  • monte carlo simulation
  • process variation
  • SRAM

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Wang, L., Shafaei, A., Chen, S., Wang, Y., Nazarian, S., & Pedram, M. (2015). 10nm Gate-length junctionless gate-all-around (JL-GAA) FETs based 8T SRAM design under process variation using a cross-layer simulation. In 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015 [7333552] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/S3S.2015.7333552